公开(公告)号：US11508869B2

公开(公告)日：2022-11-22

申请号：US16986758

申请日：2020-08-06

Applicant: Ohio State Innovation Foundation

Inventor： Sanjay Krishna ,  Sri Harsha Kodati ,  Theodore Ronningen ,  Seunghyun Lee

IPC: H01L31/102 ,  H01L31/109 ,  H01L31/11

Abstract: A lateral interband Type II engineered (LITE) detector is provided. LITE detectors use engineered heterostructures to spatially separate electrons and holes into separate layers. The device may have two configurations, a positive intrinsic (PIN) configuration and a BJT (Bipolar junction transistor) configuration. The PIN configuration may have a wide bandgap (WBG) layer that transports the holes above a narrow bandgap (NBG) absorber layer that absorbs the target radiation and transports the electrons. The BJT configuration may have a WBG layer operating as a BJT above an NBG layer. In both configurations, the LITE design uses a Type II staggered offset between the NBG layers and the WBG layers that provides a built-in field for the holes to drift from an absorber region to a transporter region.

公开(公告)号：US20210043791A1

公开(公告)日：2021-02-11

申请号：US16986758

申请日：2020-08-06

Applicant: Ohio State Innovation Foundation

Inventor： Sanjay Krishna ,  Sri Harsha Kodati ,  Theodore Ronningen ,  Seunghyun Lee

IPC: H01L31/109 ,  H01L31/11

Abstract: A lateral interband Type II engineered (LITE) detector is provided. LITE detectors use engineered heterostructures to spatially separate electrons and holes into separate layers. The device may have two configurations, a positive intrinsic (PIN) configuration and a BJT (Bipolar junction transistor) configuration. The PIN configuration may have a wide bandgap (WBG) layer that transports the holes above a narrow bandgap (NBG) absorber layer that absorbs the target radiation and transports the electrons. The BJT configuration may have a WBG layer operating as a BJT above an NBG layer. In both configurations, the LITE design uses a Type II staggered offset between the NBG layers and the WBG layers that provides a built-in field for the holes to drift from an absorber region to a transporter region.