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Patent Agency Ranking1.发明授权Method of producing doped semiconductor material and apparatus for carrying out the said methods 失效制造掺杂半导体材料的方法和用于实施所述方法的装置
公开(公告)号：US3323954A
公开(公告)日：1967-06-06
申请号：US36102164
申请日：1964-04-20
Applicant: PHILIPS CORP
Inventor： JAN GOORISSEN
IPC: B01J4/00 , B01J19/08 , C01B6/00 , C01B33/02 , C23C8/00 , C23C14/32 , C23C16/452 , C30B13/12 , C30B31/16 , H01L21/00
CPC classification number: C01B33/02 , B01J4/008 , B01J19/088 , C01B6/00 , C23C8/00 , C23C14/32 , C23C16/452 , C30B13/12 , C30B31/165 , H01L21/00 , Y10S148/129 , Y10S148/169 , Y10S252/951 , Y10S438/925
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2.发明授权Method for treating materials having a high surface tension in the molten state in a crucible 失效在坩埚中处理熔融状态下具有高表面张力的材料的方法
公开(公告)号：US3067139A
公开(公告)日：1962-12-04
申请号：US69714157
申请日：1957-11-18
Applicant: PHILIPS CORP
Inventor： JAN GOORISSEN
CPC classification number: B01L3/04 , B22D41/01 , C30B13/14 , C30B15/04 , C30B15/12 , C30B15/14 , C30B35/002 , H05B6/30 , Y10S117/90 , Y10S148/074
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公开(公告)号：US2956863A
公开(公告)日：1960-10-18
申请号：US68919757
申请日：1957-10-09
Applicant: PHILIPS CORP
Inventor： JAN GOORISSEN
IPC: C30B15/12
CPC classification number: C30B15/12 , Y10T117/1016 , Y10T117/1068
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公开(公告)号：US3092462A
公开(公告)日：1963-06-04
申请号：US8274761
申请日：1961-01-16
Applicant: PHILIPS CORP
Inventor： JAN GOORISSEN
CPC classification number: C30B29/06 , C10L1/06 , C30B13/06 , Y10S117/906
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公开(公告)号：US3062691A
公开(公告)日：1962-11-06
申请号：US84876959
申请日：1959-10-26
Applicant: PHILIPS CORP
Inventor： JAN GOORISSEN , ADRIANUS MANINTVELD JAN
CPC classification number: C22C1/02 , C22C32/00 , C22C32/0073 , H01L21/00 , Y10T428/12528 , Y10T428/12576
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