公开(公告)号：US3808463A

公开(公告)日：1974-04-30

申请号：US28235672

申请日：1972-08-21

Applicant: PHILIPS CORP

Inventor： MULDER C

IPC: G03B7/081 ,  G03B7/083 ,  G06G7/26 ,  G11C27/02 ,  H01J1/36 ,  H03F3/347 ,  H03G3/30

CPC classification number: G03B7/083 ,  G11C27/028 ,  H03F3/347

Abstract: The integrated circuit described is a function generator which, for example, is eminently suited for use in a shutter system of an automatic photographic camera. The current which is delivered by the photodiode and is a measure of the intensity of the light incident on the objective of the camera is supplied to this function generator as the input current. This current is converted, by means of a voltage which is generated in the generator and is a function of the film speed of the film used and the diaphragm stop, into an output current which is supplied to an integrating circuit. The value of the said output current and the integrating circuit then determine the exposure time.

Abstract translation: 所描述的集成电路是功能发生器，其例如非常适合用于自动摄影相机的快门系统。 由光电二极管传递的电流是入射到摄像机物镜上的光的强度的量度作为输入电流被提供给该函数发生器。 该电流通过在发生器中产生的电压并且是所使用的膜和膜片停止的膜速度的函数转换成提供给积分电路的输出电流。 然后，所述输出电流和积分电路的值确定曝光时间。

公开(公告)号：US3822387A

公开(公告)日：1974-07-02

申请号：US25895272

申请日：1972-06-02

Applicant: PHILIPS CORP

Inventor： MULDER C

IPC: G03B7/08 ,  G05F3/22 ,  H01L27/082 ,  H03F3/347 ,  H01L19/00

CPC classification number: H01L27/0821 ,  G03B7/0807 ,  G05F3/222 ,  H03F3/347

Abstract: Integrated circuit for measuring the short-circuit current of a photodiode, which circuit uses the combination of an npn current mirror and a multi-collector lateral pnp transistor the base of which is controlled via a current-amplifying npn transistor.

Abstract translation: 用于测量光电二极管的短路电流的集成电路，该电路使用npn电流镜和多集电极横向pnp晶体管的组合，其基极通过电流放大npn晶体管来控制。

公开(公告)号：US3829789A

公开(公告)日：1974-08-13

申请号：US31248472

申请日：1972-12-06

Applicant: PHILIPS CORP

Inventor： MULDER C

IPC: G05F3/30 ,  H03F3/347 ,  H03F1/32

CPC classification number: G05F3/30 ,  H03F3/347

Abstract: A microampere current source for an integrated circuit comprising a first d-c current source for providing an input control current of at most 10 Mu a, first and second semiconductor circuits having substantially equal emitter characteristics, a resistor coupled to said first and second semiconductor circuits to form a closed loop and a second d-c current source coupled to the loop. The first semiconductor circuit comprises a rectifier and is coupled to the second semiconductor circuit so as to provide for the passage of the input control current through the base-emitter path of the semiconductor circuits. The second d-c current source provides a reference potential to the emitter of the second semiconductor circuit and supplies a current to the resistor of such magnitude that the voltage drop across the rectifier exceeds the baseemitter voltage of the second semiconductor circuit by between 20 and 540 millivolts.

Abstract translation: 一种用于集成电路的微安培电流源，包括用于提供具有基本上相等的发射极特性的至多10μA的第一和第二半导体电路的输入控制电流的第一直流电流源，耦合到所述第一和第二半导体电路以形成 闭环和耦合到环路的第二直流电流源。 第一半导体电路包括整流器并耦合到第二半导体电路，以便提供输入控制电流通过半导体电路的基极 - 发射极路径。 第二直流电流源为第二半导体电路的发射极提供参考电位，并向电阻器提供电流，使得整流器两端的电压降超过第二半导体电路的基极 - 发射极电压在20和540之间 毫伏。