公开(公告)号：US20180074349A1

公开(公告)日：2018-03-15

申请号：US15559911

申请日：2016-02-17

Applicant: NEC Corporation ,  Photonics Electronics Technology Research Association

Inventor： Junichi FUJIKATA ,  Shigeki TAKAHASHI

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2202/10

Abstract: An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.

公开(公告)号：US20190384135A1

公开(公告)日：2019-12-19

申请号：US16440407

申请日：2019-06-13

Applicant: NEC CORPORATION ,  PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION

Inventor： Shigeki TAKAHASHI ,  Junichi FUJIKATA

IPC: G02F1/225

Abstract: Provided is a SIS-type electro-optic modulator capable of realizing highly efficient optical coupling with a rib-type Si waveguide, improving modulation efficiency, realizing reduction of electric capacity and lead-out resistance in stacked semiconductor layers. The modulator includes a SIS junction constituted by first and second semiconductor layers having different type of conductivity and a dielectric layer interposed therebetween, wherein an electrical signal from electrodes coupled to the first and second semiconductor layers causes free carriers accumulate, deplete or invert on both sides of the dielectric layer, thereby modulating a free carrier concentration felt by an optical signal electric filed, light having a polarization component orthogonal to the width direction of the SIS junction is incident on the dielectric layer, and the width of the SIS junction is λ/neff or less (λ is the wavelength of the incident light and neff is an effective refractive index of the modulator to the incident light).

公开(公告)号：US20160170157A1

公开(公告)日：2016-06-16

申请号：US14904038

申请日：2014-07-09

Applicant: PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION

Inventor： Shigeki TAKAHASHI

IPC: G02B6/42 ,  G02B6/293 ,  G02B6/122

CPC classification number: G02B6/4209 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/2804 ,  G02B6/29344 ,  G02B2006/12121

Abstract: A low-cost optical circuit, in which influence of reflected light is reduced, is provided. According to an embodiment of the present invention, an optical circuit (200) comprises a first optical coupler (204A) having at least two outputs, and a second optical coupler (204B) coupled to at least one of the outputs of the first optical coupler (204A), and wherein the ratio of an intensity of light reflected from the first optical coupler (204A) to an intensity of light inputted to the first optical coupler is smaller than the ratio of an intensity of light reflected from the second optical coupler (204B) to an intensity of light inputted to the second optical coupler.

Abstract translation: 提供了其中减少了反射光的影响的低成本光学电路。 根据本发明的实施例，光电路（200）包括具有至少两个输出的第一光耦合器（204A）和耦合到第一光耦合器的至少一个输出端的第二光耦合器（204B） （204A），并且其中从所述第一光耦合器（204A）反射的光的强度与输入到所述第一光耦合器的光的强度之比小于从所述第二光耦合器（204A）反射的光的强度的比 204B）输入到第二光耦合器的光强度。