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公开(公告)号：US09989677B2
公开(公告)日：2018-06-05
申请号：US14427052
申请日：2013-09-04
Applicant: Purdue Research Foundation
Inventor： Vladimir Shalaev , Alexander Kildishev , Xingjie Ni , Satoshi Ishii
CPC classification number: G02B5/008 , B82Y20/00 , G02B1/002 , Y10S977/834
Abstract: An ultra-thin planar device is used for arbitrary waveform formation on a micrometer scale, regardless of the incident light's polarization. Patterned perforations are made in a 30 nm-thick metal film, creating discrete phase shifts and forming a desired wavefront of cross-polarized, scattered light. The signal-to-noise ratio of these devices is at least one order of magnitude higher than current metallic nano-antenna designs. The focal length of a lens built on such principle can also be adjusted by changing the wavelength of the incident light. All proposed embodiments can be embedded, for example, on a chip or at the end of an optical fiber.
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公开(公告)号：US20180292581A1
公开(公告)日：2018-10-11
申请号：US16000843
申请日：2018-06-05
Applicant: Purdue Research Foundation
Inventor： Vladimir Shalaev , Alexander Kildishev , Xingjie Ni , Satoshi Ishii
CPC classification number: G02B5/008 , B82Y20/00 , G02B1/002 , Y10S977/834
Abstract: An ultra-thin planar device is used for arbitrary waveform formation on a micrometer scale, regardless of the incident light's polarization. Patterned perforations are made in a 30 nm-thick metal film, creating discrete phase shifts and forming a desired wavefront of cross-polarized, scattered light. The signal-to-noise ratio of these devices is at least one order of magnitude higher than current metallic nano-antenna designs. The focal length of a lens built on such principle can also be adjusted by changing the wavelength of the incident light. All proposed embodiments can be embedded, for example, on a chip or at the end of an optical fiber.
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公开(公告)号：US10690817B2
公开(公告)日：2020-06-23
申请号：US16000843
申请日：2018-06-05
Applicant: Purdue Research Foundation
Inventor： Vladimir Shalaev , Alexander Kildishev , Xingjie Ni , Satoshi Ishii
Abstract: An ultra-thin planar device is used for arbitrary waveform formation on a micrometer scale, regardless of the incident light's polarization. Patterned perforations are made in a 30 nm-thick metal film, creating discrete phase shifts and forming a desired wavefront of cross-polarized, scattered light. The signal-to-noise ratio of these devices is at least one order of magnitude higher than current metallic nano-antenna designs. The focal length of a lens built on such principle can also be adjusted by changing the wavelength of the incident light. All proposed embodiments can be embedded, for example, on a chip or at the end of an optical fiber.
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公开(公告)号：US20150309218A1
公开(公告)日：2015-10-29
申请号：US14427052
申请日：2013-09-04
Applicant: PURDUE RESEARCH FOUNDATION
Inventor： Vladimir Shalaev , Alexander Kildishev , Xingjie Ni , Satoshi Ishii
CPC classification number: G02B5/008 , B82Y20/00 , G02B1/002 , Y10S977/834
Abstract: An ultra-thin planar device is used for arbitrary waveform formation on a micrometer scale, regardless of the incident light's polarization. Patterned perforations are made in a 30 nm-thick metal film, creating discrete phase shifts and forming a desired wavefront of cross-polarized, scattered light. The signal-to-noise ratio of these devices is at least one order of magnitude higher than current metallic nano-antenna designs. The focal length of a lens built on such principle can also be adjusted by changing the wavelength of the incident light. All proposed embodiments can be embedded, for example, on a chip or at the end of an optical fiber.
Abstract translation: 无论入射光的极化如何，超薄平面器件均用于微米级的任意波形形成。 图案穿孔在30nm厚的金属膜中制成，产生离散相移并形成期望的交叉极化散射光的波前。 这些器件的信噪比比目前的金属纳米天线设计高至少一个数量级。 也可以通过改变入射光的波长来调整构成该原理的透镜的焦距。 所有提出的实施例可以例如嵌入在芯片上或在光纤的末端。
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