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公开(公告)号:US20180290208A1
公开(公告)日:2018-10-11
申请号:US15915017
申请日:2018-03-07
Inventor: HISAO NAGAI , TAKESHI KOIWASAKI , MASAAKI TANABE , TAKAFUMI OKUMA
IPC: B22F1/00 , B22F9/14 , H01J37/32 , H05H1/42 , C04B35/628
CPC classification number: B22F1/0018 , B01J2219/0809 , B01J2219/0841 , B01J2219/0898 , B22F9/14 , B22F2201/20 , B22F2202/13 , B22F2999/00 , C04B35/62834 , H01J37/32055 , H05H1/42 , H05H1/48 , H05H2245/124
Abstract: A production apparatus for fine particles includes a vacuum chamber, a material supply device, a plurality of electrodes arranged and a collection device connecting to the other end of the vacuum chamber and collecting fine particles, which generates plasma and produces fine particles from the material particles, in which a first electrode arrangement region on the material supply port's side and a second electrode arrangement region apart from the first electrode arrangement region to the collection device's side which respectively cross a direction in which the material flows between the vicinity of the material supply port and the collection device are provided in the intermediate part of the vacuum chamber, and both the first electrode arrangement region and the second electrode arrangement region are provided with a plurality of electrodes respectively to form the electrodes in multi-stages.
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公开(公告)号:US20180304374A1
公开(公告)日:2018-10-25
申请号:US15922838
申请日:2018-03-15
Inventor: MASAAKI TANABE , HISAO NAGAI , TAKESHI KOIWASAKI , TAKAFUMI OKUMA
IPC: B22F9/14 , C01B32/956 , C01B33/021 , B22F9/16 , B22F1/00 , B01J19/08
CPC classification number: B22F9/14 , B01J19/088 , B01J2219/0875 , B01J2219/0894 , B22F1/0018 , B22F9/16 , B22F2201/013 , B22F2201/11 , B22F2201/20 , B22F2202/13 , B22F2301/10 , B22F2301/15 , B22F2301/255 , B22F2304/05 , B22F2998/10 , B22F2999/00 , C01B32/956 , C01B33/021 , C01P2004/64
Abstract: A production apparatus and method for fine particles are capable of increasing a production amount and producing fine particles at low cost by efficiently inputting a large amount of material to plasma. The production apparatus includes a material supply device, which includes a plurality of material supply ports that supply a material gas containing material particles and are arranged below a plurality of electrodes in a vertical direction inside a vacuum chamber. The material supply device further includes a first gas supply port that supplies a first shield gas arranged in an inner periphery of the plural material supply ports and plural second gas supply ports that supply a second shield gas arranged in an outer periphery of the plural material supply ports.
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公开(公告)号:US20180174808A1
公开(公告)日:2018-06-21
申请号:US15834036
申请日:2017-12-06
Inventor: DAISUKE SUETSUGU , MASAAKI TANABE , AKIRA OKUDA , YOSIMASA TAKII
CPC classification number: H01J37/3476 , C23C14/0652 , C23C14/3485 , C23C14/35 , C23C14/50 , C23C14/54 , H01J37/32715 , H01J37/3402 , H01J37/3467 , H01L21/0217 , H01L21/02266
Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.
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