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公开(公告)号:US12250838B2
公开(公告)日:2025-03-11
申请号:US17463637
申请日:2021-09-01
Inventor: Shinya Okamoto , Atsushi Ishikawa , Yasuhisa Inada
IPC: H01L31/0232 , B82Y30/00 , C25B1/04 , C25B11/04 , H01L31/0224 , H01L31/0352 , H01L31/108 , H10F77/14 , H10F77/20 , H10F77/40
Abstract: An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an alloy layer which is in contact with the nanostructure body and which has a lower work function than the nanostructure body, and an n-type semiconductor which is in Schottky contact with the alloy layer. The nanostructure body is composed of one selected from the group consisting of elemental metals, alloys, metal nitrides, and conductive oxides. The alloy layer is composed of at least two metals.
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公开(公告)号:US12205972B2
公开(公告)日:2025-01-21
申请号:US17460398
申请日:2021-08-30
Inventor: Shinya Okamoto , Yasuhisa Inada , Atsushi Ishikawa
IPC: H01L27/146 , H01L31/0232 , H01L31/108 , H02S10/30
Abstract: An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.
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公开(公告)号:US11652185B2
公开(公告)日:2023-05-16
申请号:US16529420
申请日:2019-08-01
Inventor: Shinya Okamoto , Satoshi Yotsuhashi , Taku Hirasawa
IPC: H01L31/10 , H01L31/108 , B82Y30/00 , H01L31/0224 , H01L31/07 , C25B1/04 , C25B1/55 , C25B9/19 , C25B9/73 , C25B11/081
CPC classification number: H01L31/108 , B82Y30/00 , C25B1/04 , C25B1/55 , C25B9/19 , C25B9/73 , C25B11/081 , H01L31/022408 , H01L31/07
Abstract: An optical device includes an intermetallic compound of a first metal and a second metal having a lower work function than the first metal, or a solid-solution alloy of the first metal and the second metal and includes an n-type semiconductor in Schottky junction with the intermetallic compound or the solid-solution alloy.
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