公开(公告)号：US07254056B2

公开(公告)日：2007-08-07

申请号：US11499237

申请日：2006-08-03

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: G11C11/00 ,  G11B3/70

CPC classification number: G11C16/20 ,  G11C13/0004 ,  G11C13/04 ,  G11C16/10

Abstract: In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states. The memory cells may be electrically addressable and include a transistor in each cell to electrically read and write data to the cell. An energy beam may be used to pre-program the device by heating selected memory cells, and consequently changing the state of the phase change material.

Abstract translation: 在一个实施例中，相变非易失性存储器包括多个存储器单元。 存储单元包括可以在两个存储器状态之间转变的相变材料。 相变材料在不同的状态下具有不同的电性能。 存储器单元可以是电可寻址的，并且在每个单元中包括晶体管以电子读取和写入到该单元的数据。 可以使用能量束来加热所选择的存储器单元来预编程器件，从而改变相变材料的状态。

公开(公告)号：US20060268603A1

公开(公告)日：2006-11-30

申请号：US11499237

申请日：2006-08-03

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: G11C11/00

CPC classification number: G11C16/20 ,  G11C13/0004 ,  G11C13/04 ,  G11C16/10

Abstract: In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states. The memory cells may be electrically addressable and include a transistor in each cell to electrically read and write data to the cell. An energy beam may be used to pre-program the device by heating selected memory cells, and consequently changing the state of the phase change material.

公开(公告)号：US07106622B2

公开(公告)日：2006-09-12

申请号：US10043993

申请日：2002-01-09

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: G11C11/00 ,  G11B3/70

CPC classification number: G11C16/20 ,  G11C13/0004 ,  G11C13/04 ,  G11C16/10

Abstract: In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states. The memory cells may be electrically addressable and include a transistor in each cell to electrically read and write data to the cell. An energy beam may be used to pre-program the device by heating selected memory cells, and consequently changing the state of the phase change material.

Abstract translation: 在一个实施例中，相变非易失性存储器包括多个存储器单元。 存储单元包括可以在两个存储器状态之间转变的相变材料。 相变材料在不同的状态下具有不同的电性能。 存储器单元可以是电可寻址的，并且在每个单元中包括晶体管以电子读取和写入到该单元的数据。 可以使用能量束来加热所选择的存储器单元来预编程器件，从而改变相变材料的状态。

公开(公告)号：US07330954B2

公开(公告)日：2008-02-12

申请号：US10126097

申请日：2002-04-18

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: G06F12/00 ,  G06F13/00

CPC classification number: G06F12/06 ,  G06F2212/205 ,  Y02D10/13

Abstract: Briefly, in accordance with an embodiment of the invention, a method to store information is provided, wherein the method includes generating a storage parameter to store information, wherein the storage parameter indicates use of the information by a software process and transferring the information to one of at least two memory devices based at least in part on the storage parameter and on a characteristic of the two memory devices.

Abstract translation: 简而言之，根据本发明的实施例，提供了一种存储信息的方法，其中该方法包括生成用于存储信息的存储参数，其中存储参数指示通过软件处理使用该信息并将该信息传送到一个 至少部分地基于所述存储参数和所述两个存储器件的特性的至少两个存储器件。

公开(公告)号：US06687496B1

公开(公告)日：2004-02-03

申请号：US09631871

申请日：2000-08-02

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: H04M300

CPC classification number: G06F8/65 ,  H04W48/08 ,  H04W48/16 ,  H04W88/02

Abstract: A device, that includes nonvolatile memory, a peripheral antenna, and a peripheral radio frequency (RF) receiver, is configured to receive a peripheral RF signal containing programming and to write the programming to the nonvolatile memory. Examples of such a device include, a cellular phone, a personal digital assistant (PDA), and a desktop personal computer. The programming received by the device can be used to update a boot-up algorithm or an application stored in the nonvolatile memory of the device. In one embodiment, a system programs a plurality of devices via a plurality of peripheral RF signals particular to each device. A computer system has stored a plurality of RF data module arrays to generate the plurality of peripheral RF signals.

Abstract translation: 包括非易失性存储器，外围天线和外围射频（RF）接收器的设备被配置为接收包含编程的外围RF信号并将编程写入非易失性存储器。 这种装置的实例包括蜂窝电话，个人数字助理（PDA）和台式个人计算机。 由设备接收的编程可用于更新存储在设备的非易失性存储器中的引导算法或应用程序。 在一个实施例中，系统经由特定于每个设备的多个外围RF信号对多个设备进行编程。 计算机系统已经存储了多个RF数据模块阵列以产生多个外围RF信号。

公开(公告)号：US20050259498A1

公开(公告)日：2005-11-24

申请号：US11191887

申请日：2005-07-27

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: G11B7/00 ,  G11B7/26 ,  G11C11/34 ,  G11C16/10 ,  G11C5/00

CPC classification number: G11C16/10 ,  G11B7/268 ,  G11C13/0004

Abstract: In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory state. The transition time to achieve on memory state is longer than the transition time to achieve another memory state. All cells in the memory device may initially be set to the state with the longer transition time. An initial programming operation may have a reduced programming time because all state changes occur at the shorter transition time.

Abstract translation: 在一个实施例中，相变非易失性存储器包括多个存储器单元。 存储单元包括可在两个存储器状态之间转变的相变材料。 实现存储器状态的转换时间比实现另一个存储器状态的转换时间长。 存储器件中的所有单元最初可以被设置为具有较长转换时间的状态。 初始编程操作可能具有减少的编程时间，因为所有状态改变发生在较短的转换时间。

公开(公告)号：US06249131B1

公开(公告)日：2001-06-19

申请号：US09144181

申请日：1998-08-31

Applicant: Peter Nangle

Inventor： Peter Nangle

IPC: G01R3102

CPC classification number: H05K3/3436 ,  G01R1/0483 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H05K1/0268 ,  H05K3/363 ,  H05K2201/09572 ,  H05K2201/10666 ,  H05K2203/0338 ,  H05K2203/041 ,  Y02P70/613

Abstract: An electronic assembly comprising an electrical device, an array of solder balls connected to the electrical device, and a sheet adjacent the electrical device. The sheet has a plurality of holes formed therethrough and a plurality of electrical lines formed thereon. Each electrical line has a first contact portion on a first surface of the sheet, a probe contact at a location away from the electrical device, and a trace interconnecting the probe contact with the first contact portion. Each ball extends through a respective hole in the sheet. Each ball is also in contact with a respective first contact portion of a respective electrical line.

Abstract translation: 一种电子组件，包括电气装置，连接到电气装置的焊球的阵列以及邻近电气装置的片材。 片材具有穿过其形成的多个孔和形成在其上的多条电线。 每个电线具有在片材的第一表面上的第一接触部分，远离电气设备的位置处的探针接触件和将探针接触件与第一接触部分相互连接的迹线。 每个球延伸通过片材中相应的孔。 每个球也与相应的电线的相应的第一接触部分接触。