公开(公告)号：US07951634B2

公开(公告)日：2011-05-31

申请号：US12173739

申请日：2008-07-15

Applicant: Philip D. Floyd

Inventor： Philip D. Floyd

IPC: H01L21/00

CPC classification number: H01L27/0248 ,  B81B7/0012 ,  B81B2201/047 ,  G02B26/001

Abstract: A MEMS device such as an interferometric modulator includes an integrated ESD protection element capable of shunting to ground an excess current carried by an electrical conductor in the MEMS device. The protection element may be a diode and may be formed by depositing a plurality of doped semiconductor layers over the substrate on which the MEMS device is formed.

Abstract translation: 诸如干涉式调制器之类的MEMS器件包括集成的ESD保护元件，其能够将由MEMS器件中的电导体携带的过剩电流分流到地。 保护元件可以是二极管，并且可以通过在其上形成MEMS器件的衬底上沉积多个掺杂半导体层来形成。

公开(公告)号：US20110085278A1

公开(公告)日：2011-04-14

申请号：US12972219

申请日：2010-12-17

Applicant: Philip D. Floyd

Inventor： Philip D. Floyd

IPC: H01G7/00

CPC classification number: G02B26/001 ,  G09G3/346 ,  G09G3/3466 ,  G09G3/3473 ,  G09G2300/06 ,  H01G5/18 ,  H01G5/40

Abstract: A voltage-controlled capacitor and methods for forming the same are described. A mechanical conductor membrane of the voltage-controlled capacitor is movable to and from a first position and a second position. An amount of capacitance can vary with the movement of the mechanical conductor membrane. A microelectromechanical systems (MEMS) voltage-controlled capacitor can be used in a variety of applications, such as, but not limited to, RF switches and RF attenuators.

Abstract translation: 描述了压控电容器及其形成方法。 压控电容器的机械导体膜可移动到第一位置和第二位置。 电容量可随着机械导体膜的移动而变化。 微机电系统（MEMS）压控电容器可用于各种应用中，例如但不限于RF开关和RF衰减器。

公开(公告)号：US07843410B2

公开(公告)日：2010-11-30

申请号：US11134007

申请日：2005-05-20

Applicant: Philip D. Floyd

Inventor： Philip D. Floyd

IPC: G09G3/34

CPC classification number: G09G3/3466 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2340/0414 ,  G09G2340/0421

Abstract: One embodiment includes a display of interferometric modulators having a configurable resolution characteristic. Selected rows and/or columns are interconnected via a switch. The switch can include a fuse, antifuse, transistor, and the like. Depending on a desired resolution for a display, the switches can be placed in an “open” or “closed” state. Advantageously, using the switches, a display can readily be configured for differing modes of resolution. Furthermore, using the switches, a display can be configured to electrically connect certain rows or columns in the display such that the connected rows or columns can be driven simultaneously by a common voltage source.

Abstract translation: 一个实施例包括具有可配置分辨率特性的干涉式调制器的显示器。 选定的行和/或列通过交换机互连。 开关可以包括保险丝，反熔丝，晶体管等。 根据所需的显示分辨率，开关可以处于“打开”或“关闭”状态。 有利地，使用这些开关，可以容易地将显示器配置为不同的分辨率模式。 此外，使用这些开关，可以将显示器配置为电连接显示器中的某些行或列，使得所连接的行或列可以由公共电压源同时驱动。

公开(公告)号：US20100072595A1

公开(公告)日：2010-03-25

申请号：US12628024

申请日：2009-11-30

Applicant: Philip D. Floyd

Inventor： Philip D. Floyd

IPC: H01L23/02 ,  H01L21/56

CPC classification number: B81C1/00269 ,  B81C2203/019 ,  G02B26/001

Abstract: A method of sealing a microelectromechanical system (MEMS) device from ambient conditions is described, wherein the MEMS device is formed on a substrate and a substantially hermetic seal is formed as part of the MEMS device manufacturing process. The method comprises forming a metal seal on the substrate proximate to a perimeter of the MEMS device using a method such as photolithography. The metal seal is formed on the substrate while the MEMS device retains a sacrificial layer between conductive members of MEMS elements, and the sacrificial layer is removed after formation of the seal and prior to attachment of a backplane.

Abstract translation: 描述了一种从环境条件密封微机电系统（MEMS）器件的方法，其中MEMS器件形成在衬底上，并且基本上气密的密封件被形成为MEMS器件制造工艺的一部分。 该方法包括使用诸如光刻法的方法在MEMS器件的周边附近在基板上形成金属密封。 金属密封件形成在衬底上，而MEMS器件在MEMS元件的导电构件之间保留牺牲层，并且在形成密封件之后并且在附接背板之前移除牺牲层。

公开(公告)号：US07630119B2

公开(公告)日：2009-12-08

申请号：US11203613

申请日：2005-08-12

Applicant: Ming-Hau Tung ,  Brian W. Arbuckle ,  Philip D. Floyd ,  William J. Cummings

Inventor： Ming-Hau Tung ,  Brian W. Arbuckle ,  Philip D. Floyd ,  William J. Cummings

IPC: G02B26/00

CPC classification number: G02B26/001

Abstract: A support structure within an interferometric modulator device may contact various other structures within the device. Increased bond strengths between the support structure and the other structures may be achieved in various ways, such as by providing roughened surfaces and/or adhesive materials at the interfaces between the support structures and the other structures. In an embodiment, increased adhesion is achieved between a support structure and a substrate layer. In another embodiment, increased adhesion is achieved between a support structure and a moveable layer. Increased adhesion may reduce undesirable slippage between the support structures and the other structures to which they are attached within the interferometric modulator.

Abstract translation: 干涉式调制器装置内的支撑结构可接触装置内的各种其它结构。 支撑结构和其他结构之间的增加的结合强度可以以各种方式实现，例如通过在支撑结构和其它结构之间的界面处提供粗糙化的表面和/或粘合材料。 在一个实施方案中，在支撑结构和基底层之间实现增加的粘附。 在另一个实施例中，在支撑结构和可移动层之间实现增加的粘附。 增加的粘合力可以减少支撑结构和它们在干涉式调制器内附着的其它结构之间的不希望的滑动。

公开(公告)号：US20090296191A1

公开(公告)日：2009-12-03

申请号：US12427670

申请日：2009-04-21

Applicant: Philip D. Floyd

Inventor： Philip D. Floyd

IPC: G02F1/21

CPC classification number: G02B26/001

Abstract: Various embodiments of the invention relate to methods and systems for generating the color white in displays created from interferometric modulators and more specifically, to the generation of the color white through the use of reflected light at two wavelengths. In one embodiment, a display device displays the color white. The color white is generated by reflecting light from two pluralities of interferometric modulator types. The first modulator type reflects colored light at a specific wavelength. The second modulator type reflects colored light selected to be at a wavelength complementary to the first. The combined light reflected from the two types appears white in the display.

Abstract translation: 本发明的各种实施例涉及用于在由干涉式调制器产生的显示器中产生彩色白色的方法和系统，更具体地说，涉及通过使用两个波长的反射光来产生白色。 在一个实施例中，显示装置显示白色。 彩色白色是通过反射来自两个干涉式调制器类型的光产生的。 第一调制器类型反射特定波长的彩色光。 第二调制器类型反射被选择为与第一个波长互补的波长的彩色光。 从两种类型反射的组合光在显示屏上显示为白色。

公开(公告)号：US06548908B2

公开(公告)日：2003-04-15

申请号：US09473108

申请日：1999-12-27

Applicant: Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

Inventor： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

IPC: H01L2348

CPC classification number: G02B6/136 ,  G02B6/132 ,  G02B2006/12102 ,  G02B2006/12104 ,  G02B2006/12119 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/1215 ,  G02B2006/12176 ,  H01S5/18313 ,  H01S5/18338 ,  H01S5/18388 ,  H01S5/2215

Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.

Abstract translation: 无源半导体器件结构使用平面侧向氧化来形成掩埋氧化半导体结构，例如无源波导，微透镜或DBR反射镜叠层。

公开(公告)号：US06511149B1

公开(公告)日：2003-01-28

申请号：US09163893

申请日：1998-09-30

Applicant: Eric Peeters ,  Jaan Noolandi ,  Raj B. Apte ,  Philip D. Floyd ,  Jonathan A. Small ,  Gregory J. Kovacs ,  Meng H. Lean ,  Armin R. Volkel ,  Steven B. Bolte ,  An-Chang Shi ,  Frederick J. Endicott ,  Gregory B. Anderson ,  Dan A. Hays ,  Joel A. Kubby ,  Warren B. Jackson

Inventor： Eric Peeters ,  Jaan Noolandi ,  Raj B. Apte ,  Philip D. Floyd ,  Jonathan A. Small ,  Gregory J. Kovacs ,  Meng H. Lean ,  Armin R. Volkel ,  Steven B. Bolte ,  An-Chang Shi ,  Frederick J. Endicott ,  Gregory B. Anderson ,  Dan A. Hays ,  Joel A. Kubby ,  Warren B. Jackson

IPC: B41J215

CPC classification number: B41J2/01 ,  B41J2/14 ,  B41J2/211 ,  B41J2202/02

Abstract: A marking apparatus is disclosed in which a propellant stream is passed through a channel and directed toward a substrate. Marking material, such as ink, toner, etc., is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. At sufficient velocity, and with appropriate marking material, the marking material may be kinetically fused to the substrate. A multiplicity of channels for directing the propellant and marking material allow for high throughput, high resolution marking. Multiple marking materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without registration. One example is a single-pass, full-color printer.

Abstract translation: 公开了一种标记装置，其中推进剂流通过通道并指向基板。 诸如油墨，调色剂等的标记材料被可控地引入推进剂流中并且赋予足够的动能从而被入射到基底上。 在足够的速度下，并且使用适当的标记材料，标记材料可以与基底动力学融合。 用于引导推进剂和标记材料的多个通道允许高通量，高分辨率标记。 可以将多个标记材料引入通道中并在其入射到基板之前混合，或者混合或叠加在基板上而不进行配准。 一个例子是单程全彩色打印机。

公开(公告)号：US6121983A

公开(公告)日：2000-09-19

申请号：US196396

申请日：1998-11-19

Applicant: David K. Fork ,  G. A. Neville Connell ,  Eric Peeters ,  Robert L. Thornton ,  Patrick Y. Maeda ,  Ross D. Bringans ,  Thomas L. Paoli ,  Joel A. Kubby ,  Decai Sun ,  Philip D. Floyd

Inventor： David K. Fork ,  G. A. Neville Connell ,  Eric Peeters ,  Robert L. Thornton ,  Patrick Y. Maeda ,  Ross D. Bringans ,  Thomas L. Paoli ,  Joel A. Kubby ,  Decai Sun ,  Philip D. Floyd

IPC: B41J2/465 ,  G02B26/08 ,  G02B26/10 ,  H04N1/113 ,  H04N1/192 ,  H04N1/195 ,  G03G15/04

CPC classification number: H04N1/1135 ,  B41J2/465 ,  G02B26/0833 ,  G02B26/10 ,  H04N1/192 ,  H01S5/18388 ,  H01S5/423 ,  H04N1/195

Abstract: A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.

Abstract translation: 使用微镜阵列来复用固态激光器阵列，以允许以宽格式进行高分辨率打印。 激光阵列中的每个激光器和反射镜阵列中的每个微镜单独控制。 激光器阵列可以是在GaAs衬底上产生的VCSEL阵列。

公开(公告)号：US6104740A

公开(公告)日：2000-08-15

申请号：US3202

申请日：1998-01-07

Applicant: Philip D. Floyd

Inventor： Philip D. Floyd

IPC: H01S5/343 ,  H01S3/14

CPC classification number: B82Y20/00 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34313 ,  H01S5/34353

Abstract: An an infrared laser structure has an inverted or p-side down orientation. The infrared laser structure is inverted and wafer fused to a blue laser structure to form an infrared/blue monolithic laser structure. The top semiconductor layer of the inverted infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

Abstract translation: 红外激光结构具有倒置或p侧向下取向。 红外激光器结构被反转并且晶片与蓝色激光器结构融合以形成红外/蓝色单片激光器结构。 反向红外线堆叠激光器结构的顶部半导体层是GaInP熔接结合层，其将晶片熔合到作为GaN包层/接触层的蓝色激光结构的顶部半导体层。