Three-dimensional lithography by multiple two-dimensional pattern projection
    3.
    发明申请
    Three-dimensional lithography by multiple two-dimensional pattern projection 审中-公开
    通过多维二维图案投影进行三维光刻

    公开(公告)号:US20020061472A1

    公开(公告)日:2002-05-23

    申请号:US09988216

    申请日:2001-11-19

    CPC classification number: G03F7/70416 G03F7/0037 G03F7/70291

    Abstract: Two programmable masks are used for the exposure of three-dimensional patterns in a photosensitive material. This exposure technique takes advantages of symmetries and repeating structures in the exposure pattern to reduce the exposure time, while maintaining the flexibility to produce complicated three-dimensional shapes.

    Abstract translation: 使用两个可编程掩模来曝光感光材料中的三维图案。 该曝光技术具有曝光图案中的对称性和重复结构的优点,以减少曝光时间,同时保持产生复杂三维形状的灵活性。

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