公开(公告)号：US12279460B2

公开(公告)日：2025-04-15

申请号：US17884533

申请日：2022-08-09

Applicant: Powerchip Semiconductor Manufacturing Corporation

Inventor： Ming-Hui Chen ,  Chih-Feng Lin ,  Chiu-Tsung Huang ,  Hsiang-Hung Chang

IPC: H10D89/60

Abstract: An electrostatic discharge (ESD) protection device including the following components is provided. A first transistor includes a first gate, a first N-type source region, and an N-type drain region. A second transistor includes a second gate, a second N-type source region, and the N-type drain region. The N-type drain region is located between the first gate and the second gate. An N-type drift region is located in a P-type substrate between the first gate and the second gate and is located directly below a portion of the first gate and directly below a portion of the second gate. The N-type drain region is located in the N-type drift region. A P-type barrier region is located in the P-type substrate below the N-type drift region. The P-type barrier region has an overlapping portion overlapping the N-type drift region. There is at least one first opening in the overlapping portion.

公开(公告)号：US20230411382A1

公开(公告)日：2023-12-21

申请号：US17884533

申请日：2022-08-09

Applicant: Powerchip Semiconductor Manufacturing Corporation

Inventor： Ming-Hui Chen ,  Chih-Feng Lin ,  Chiu-Tsung Huang ,  Hsiang-Hung Chang

IPC: H01L27/02

CPC classification number: H01L27/0266

Abstract: An electrostatic discharge (ESD) protection device including the following components is provided. A first transistor includes a first gate, a first N-type source region, and an N-type drain region. A second transistor includes a second gate, a second N-type source region, and the N-type drain region. The N-type drain region is located between the first gate and the second gate. An N-type drift region is located in a P-type substrate between the first gate and the second gate and is located directly below a portion of the first gate and directly below a portion of the second gate. The N-type drain region is located in the N-type drift region. A P-type barrier region is located in the P-type substrate below the N-type drift region. The P-type barrier region has an overlapping portion overlapping the N-type drift region. There is at least one first opening in the overlapping portion.