公开(公告)号：US20220013486A1

公开(公告)日：2022-01-13

申请号：US17149835

申请日：2021-01-15

Applicant: Powertech Technology Inc.

Inventor： Shih-Chang HUANG ,  Yu-Cheng LIU

IPC: H01L23/00

Abstract: A semiconductor composite structure includes an electrically conductive bump, and a patterned bonding layer. The electrically conductive bump includes a body portion for being electrically connected to a metal layer of a semiconductor substrate, and a contact portion disposed on the body portion opposite to the metal layer. The patterned bonding layer is disposed on the contact portion opposite to the body portion, and includes an electrically conductive portion and a recess portion depressed relative to the electrically conductive portion. An etching selectivity ratio of the conductive portion relative to the contact portion is greater than 1. A method for making the semiconductor composite structure and a semiconductor device are also disclosed.