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Patent Agency Ranking
公开(公告)号：US20250096737A1
公开(公告)日：2025-03-20
申请号：US18470310
申请日：2023-09-19
Applicant: QUALCOMM Incorporated
Inventor： Xingyi HUA , Hsiao-Tsung YEN , David Zixiang YANG , Mehmet UZUNKOL
Abstract: A low-noise amplifier (LNA) includes a first transistor, a first source inductor coupled to a source of the first transistor, and a second transistor, wherein a source of the second transistor is coupled to a drain of the first transistor, a gate of the second transistor is coupled to a bias circuit, and a drain of the second transistor is coupled to an output of the LNA. The LNA also includes an output inductor coupled between a supply rail and the output of the LNA, wherein the output inductor is magnetically coupled with the first source inductor.
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公开(公告)号：US20240321936A1
公开(公告)日：2024-09-26
申请号：US18189110
申请日：2023-03-23
Applicant: QUALCOMM Incorporated
Inventor： Hsiao-Tsung YEN , Xingyi HUA , Jeongil Jay KIM
IPC: H01L23/552 , H01L23/522
CPC classification number: H01L28/10 , H01L23/5227 , H01L23/552
Abstract: An integrated device comprising a die substrate, a die interconnection portion coupled to the die substrate, an inductor, and a shield structure. The shield structure comprises a shield frame and a plurality of shield branches coupled to the shield frame, wherein at least one shield branch from the plurality of shield branches comprises a repeating wave shape.
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公开(公告)号：US20240321497A1
公开(公告)日：2024-09-26
申请号：US18189910
申请日：2023-03-24
Applicant: QUALCOMM Incorporated
Inventor： Hsiao-Tsung YEN , Xingyi HUA , Jeongil Jay KIM
IPC: H01F17/00 , H01L23/498
CPC classification number: H01F17/0013 , H01L23/49822 , H01L28/10 , H01F2017/002 , H01F2017/0086 , H01L24/16 , H01L2224/16227
Abstract: An integrated device comprising a die substrate; and a die interconnection portion coupled to the die substrate. The die interconnection comprises a first inductor and a second inductor. The first inductor comprises a first spiral comprising a first origin and a first tail and a second spiral comprising a second origin and a second tail.
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公开(公告)号：US20250141406A1
公开(公告)日：2025-05-01
申请号：US18499682
申请日：2023-11-01
Applicant: QUALCOMM Incorporated
Inventor： Xingyi HUA , Hsiao-Tsung YEN , Mehmet UZUNKOL
Abstract: Certain aspects of the present disclosure provide an amplifier. The amplifier generally includes: an active path coupled between an input node of the amplifier and an output node of the amplifier, wherein the active path comprises a first transistor coupled to the input node of the amplifier and a first inductive element coupled between the first transistor and the output node; and a bypass path coupled between the input node of the amplifier and the output node of the amplifier, the bypass path also comprising the first inductive element.
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公开(公告)号：US20240321730A1
公开(公告)日：2024-09-26
申请号：US18189673
申请日：2023-03-24
Applicant: QUALCOMM Incorporated
Inventor： Hsiao-Tsung YEN , Xingyi HUA , Jeongil Jay KIM
IPC: H01L23/522
CPC classification number: H01L23/5227 , H01L28/10 , H01L24/02 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L2224/0231 , H01L2224/02381 , H01L2224/0346 , H01L2224/0401 , H01L2224/05572 , H01L2224/11849 , H01L2224/13021 , H01L2224/16227 , H01L2224/19 , H01L2224/2105
Abstract: An integrated device comprising a die substrate, a die interconnection portion coupled to the die substrate, and a stacked inductor that includes a first figure 8-shaped inductor and a second figure 8-shaped inductor. The stacked inductor may include a first spiral comprising a first origin and a first tail, a second spiral comprising a second origin and a second tail, a third spiral comprising a third origin and a third tail and a fourth spiral comprising a fourth origin and a fourth tail. The first spiral, the second spiral, the third spiral and the fourth spiral may form the first figure 8-shaped inductor and the second figure 8-shaped inductor. The stacked inductor may be located in the die interconnection.
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