公开(公告)号：US3916431A

公开(公告)日：1975-10-28

申请号：US48174774

申请日：1974-06-21

Applicant: RCA CORP

Inventor： KHAJEZADEH HESHMAT

IPC: H01L21/74 ,  H01L21/331 ,  H01L29/08 ,  H01L29/73 ,  H01L21/20 ,  H01L27/04 ,  H01L29/72

CPC classification number: H01L29/0821 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/145

Abstract: Crystal dislocations, in that portion of an epitaxial layer of semiconductive material over a buried pocket in a substrate in which a bipolar transistor''s emitter is located, are reduced by providing the buried pocket with a lower concentration of conductivity modifiers under the emitter.

Abstract translation: 在双极晶体管的发射极所在的衬底中的掩埋槽的半导体材料的外延层的该部分中的晶体位错通过在发射极下方提供较低浓度的导电性改进剂的埋入式凹穴来减少。

公开(公告)号：US3582727A

公开(公告)日：1971-06-01

申请号：US3582727D

申请日：1969-09-17

Applicant: RCA CORP

Inventor： GRANGER GEORGE FRANCIS ,  KHAJEZADEH HESHMAT

IPC: H01L21/768 ,  H01L21/331 ,  H01L23/485 ,  H01L23/522 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/73 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L29/0638 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/085 ,  Y10S148/145 ,  H01L2924/00

Abstract: A body of semiconductor material has an isolation region of Ptype conductivity which surrounds a plurality of zones of N-type conductivity. An insulating layer is disposed on the surface of the body. At least one of the N-type zones contains a region of P-type conductivity which is connected to a bonding pad on the surface of the insulating layer by means of an electrical lead. The electrical lead and the bonding pad are disposed on the insulating layer entirely within the area above the N-type zone containing the P-type region.

公开(公告)号：US3881181A

公开(公告)日：1975-04-29

申请号：US33466073

申请日：1973-02-22

Applicant: RCA CORP

Inventor： KHAJEZADEH HESHMAT

IPC: H01C7/04 ,  G01F1/684 ,  G01K7/01 ,  G01K7/22 ,  G01P5/12 ,  H01L35/00 ,  H01L5/00 ,  H01L3/00

CPC classification number: G01K7/22 ,  G01F1/6845 ,  G01P5/12

Abstract: A semicondcutor device adapted for use as a temperature sensor, e.g., in a flowing fluid medium for sensing changes in the flow rate of the medium, includes a temperature sensitive resistor comprising a region of semiconductive material of uniform resistivity. Beam leads make electrical connection to the resistor and are adapted to provide rugged structural support for the device within the fluid medium.

Abstract translation: 适于用作温度传感器的半切割器件，例如在用于感测介质流速的变化的流动介质中包括温度敏感电阻器，其包括具有均匀电阻率的半导体材料区域。 光束导线与电阻器电连接，适用于为流体介质内的器件提供坚固的结构支撑。

公开(公告)号：US3512058A

公开(公告)日：1970-05-12

申请号：US3512058D

申请日：1968-04-10

Applicant: RCA CORP

Inventor： KHAJEZADEH HESHMAT ,  JACOBUS LEWIS A JR

IPC: H01L29/78 ,  H01L27/02 ,  H01L29/00 ,  H03F1/52 ,  H03K17/0812 ,  H01L19/00

CPC classification number: H03K17/08122 ,  H01L27/0255 ,  H01L29/00 ,  H03F1/523