公开(公告)号：US3916339A

公开(公告)日：1975-10-28

申请号：US52705374

申请日：1974-11-25

Applicant: RCA CORP

Inventor： LADANY IVAN ,  MARINELLI DONALD PAUL ,  KRESSEL HENRY ,  CANNULI VINCENT MICHAEL

IPC: H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S3/19 ,  H01S3/098

CPC classification number: H01S5/0425 ,  H01S5/0421 ,  H01S5/223 ,  H01S5/305

Abstract: A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region.

Abstract translation: 改进二极管激光器以便在单个纵向模式中产生输出。 激光器具有具有不同导电类型材料的两个区域的矩形体。 从矩形体的一个表面延伸到不同导电性材料的区域之一中的是第三区域。 虽然第三区域由与其延伸的区域相同的一般导电类型的材料组成，但是它更加掺杂有导电性改性剂（更具导电性）。 该第三区域沿主体的端部之间的一个表面延伸并且与主体的侧面间隔开。 电接触条被定位在一个表面上，使得其宽度的一部分与第三区域的宽度的一部分重叠。

公开(公告)号：US3891478A

公开(公告)日：1975-06-24

申请号：US38896073

申请日：1973-08-16

Applicant: RCA CORP

Inventor： LADANY IVAN ,  CANNULI VINCENT MICHAEL

IPC: C30B19/06 ,  C30B19/10 ,  C30B19/12 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  C30B19/106 ,  C30B19/12 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

Abstract: In depositing on a substrate by liquid phase epitaxy an epitaxial layer of a semiconductor material having a volatile element, an initial epitaxial layer of the semiconductor material of the substrate is first grown by liquid phase epitaxy on the substrate to provide a smooth, undamaged surface which is not contaminated with the volatile element of the semiconductor material to be deposited. Immediately upon removal of the substrate from the solution from which the initial epitaxial layer is deposited, the substrate is placed in the solution from which the desired epitaxial layer is deposited. Thus, the desired epitaxial layer is deposited on a smooth, undamaged surface which is not contaminated with the volatile element of the semiconductor material.

Abstract translation: 通过液相外延沉积在衬底上的具有挥发性元素的半导体材料的外延层，首先通过衬底上的液相外延生长衬底的半导体材料的初始外延层，以提供光滑的，未损伤的表面， 不被待沉积的半导体材料的挥发性元素污染。 在从沉积初始外延层的溶液中除去衬底后，立即将衬底置于沉积所需外延层的溶液中。 因此，期望的外延层沉积在不被半导体材料的挥发性元素污染的光滑的未损伤的表面上。

公开(公告)号：US3899371A

公开(公告)日：1975-08-12

申请号：US37346273

申请日：1973-06-25

Applicant: RCA CORP

Inventor： LADANY IVAN ,  CANNULI VINCENT MICHAEL

IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  C30B19/106 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

Abstract: Two layers of a semiconductor material composed of three or more elements are deposited in succession by liquid phase epitaxy on a substrate. The layers may be of different conductivity types to form a PN junction therebetween. The layers are deposited from separate solutions containing the semiconductor material and a suitable dopant. During the deposition of the first layer from one of the solutions, both of the solutions are treated in the same manner so that the composition of the second layer is the same as that of the first layer at the junction between the layers.

Abstract translation: 由三个或更多个元件组成的两层半导体材料通过衬底上的液相外延连续沉积。 这些层可以具有不同的导电类型以在它们之间形成PN结。 这些层从包含半导体材料和合适的掺杂剂的分离的溶液沉积。 在从一种溶液沉积第一层期间，以相同的方式处理两种溶液，使得第二层的组成与层之间的连接处的第一层的组成相同。

公开(公告)号：US3647579A

公开(公告)日：1972-03-07

申请号：US3647579D

申请日：1968-03-28

Applicant: RCA CORP

Inventor： LADANY IVAN

IPC: H01L21/208 ,  H01L33/00 ,  H01L33/30 ,  H05B33/00 ,  H01L3/00 ,  H01L7/38

CPC classification number: H01L33/30 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L33/00 ,  H01L33/0062 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/135 ,  H01L2924/00014

Abstract: GALLIUM PHOSPHIDE LIGHT EMITTING DIODES WITH REPRODUCIBLE EXTERNAL QUANTUM EFFICIENCIES GREATER THAN 1% ARE MANLUFACTURED BY SUCCESSIVE LIQUID PHASE EPITAXIAL GROWTH OF N TYPE AND P TYPE LAYERS ON A GALLIUM PHOSHIDE SUBSTRATE WHICH MAY BE OF EITHER CONDUCTIVITY TYPE. THE N TYPE LAYER IS GROWTH FIRST FROM A MELT OF TELLURIUM AND GALLIUM PHOSPHIDE IN A GALLIUM SOLVENT. THE P TYPE LAYER IS SUBSEQUENTLY GROWN ON THE N TYPE LAYER FROM A MELT OF ZINC OXIDE, GALLIUM OXIDE AND GALLIUM PHOSPHIDE IN A GALLIUM SOLVENT.