SUPPORT AND DETACHMENT OF FLEXIBLE SUBSTRATES

    公开(公告)号:US20180114905A1

    公开(公告)日:2018-04-26

    申请号:US15566163

    申请日:2016-04-13

    Abstract: This application discloses a flexible substrate device that includes a flexible substrate and a plurality of electronic devices. The flexible substrate includes a top surface and a bottom surface opposite to the top surface, and the plurality of electronic devices formed on the top surface of the flexible substrate. The bottom surface further includes one or more strong adhesion regions and one or more normal adhesion regions that are distinct from the one or more strong adhesion regions. Each of the one or more strong adhesion regions and the one or more normal adhesion regions are configured to attach to a rigid carrier with first adhesion strength and second adhesion strength, respectively. The first adhesion strength is substantially larger than the second adhesion strength. In some embodiments, the flexible substrate device is a thin film transistor (TFT) device, and the plurality of electronic devices includes a TFT array.

    THIN FILM TRANSISTOR, DISPLAY, AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR, DISPLAY, AND METHOD FOR FABRICATING THE SAME 有权
    薄膜晶体管,显示器及其制造方法

    公开(公告)号:US20160056184A1

    公开(公告)日:2016-02-25

    申请号:US14593812

    申请日:2015-01-09

    Abstract: A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.

    Abstract translation: 提供薄膜晶体管(TFT)器件。 TFT器件包括包括栅电极和连接焊盘的第一导电层。 TFT器件还包括覆盖栅电极的第一介电层和设置在电介质层上并与栅电极重叠的半导体层。 TFT器件还包括设置在半导体层和第一介电层上以暴露半导体层的第一和第二部分和连接焊盘的第二介电层。 TFT器件还包括第二导电层,其包括覆盖半导体层的第一部分的源电极部分; 延伸到源电极部分的像素电极部分; 覆盖半导体层的第二部分的漏电极部分; 以及布置在连接焊盘上并延伸到漏电极部分的互连部分。

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