公开(公告)号：US08982610B2

公开(公告)日：2015-03-17

申请号：US13750943

申请日：2013-01-25

Applicant: Raytheon Company

Inventor： Micky Harris ,  Wasim Khaled

IPC: G11C11/00 ,  G11C11/419 ,  G11C7/12 ,  G11C11/412 ,  G11C11/418

CPC classification number: G11C11/419 ,  G11C7/12 ,  G11C11/412 ,  G11C11/4125 ,  G11C11/418

Abstract: A bit line driver for a static random access memory (SRAM) cell including: a first voltage supply for supplying a first voltage; a second voltage supply for supplying a second voltage that is less than the first voltage; a write circuit to drive a bit line and an inverse bit line when writing to the SRAM cell; and a pre-charge circuit to pre-charge the bit line and the inverse bit line before reading the content of the SRAM cell. The bit line driver supplies a voltage less than the first voltage by a threshold voltage of one transistor to the bit line or the inverse bit line when the bit line driver drives the bit line or the inverse bit line to a high state.

Abstract translation: 一种用于静态随机存取存储器（SRAM）单元的位线驱动器，包括：用于提供第一电压的第一电压源; 用于提供小于所述第一电压的第二电压的第二电压源; 写入电路以写入SRAM单元时驱动位线和反向位线; 以及在读取SRAM单元的内容之前对位线和反位线进行预充电的预充电电路。 当位线驱动器将位线或反位线驱动到高电平状态时，位线驱动器将一个晶体管的阈值电压小于第一电压的电压提供给位线或反位线。