公开(公告)号：US20210028165A1

公开(公告)日：2021-01-28

申请号：US16905936

申请日：2020-06-19

Applicant: Realtek Semiconductor Corp.

Inventor： Sz-Ying Yu ,  Jui-Yu Chang ,  Chien-Wen Chen

IPC: H01L27/06 ,  H01L23/522

Abstract: The present invention provides a capacitor structure including a metal oxide semiconductor (MOS) capacitor and a metal oxide metal (MOM) capacitor. A gate electrode, a source electrode and a drain electrode of the MOS capacitor have a first finger-shaped structure implemented by a first metal layer. The MOM capacitor comprises a second finger-shaped structure implemented by a second metal layer. The second metal layer is adjacent to the first metal layer in a vertical direction.