SPIN HALL EFFECT MAGNETIC STRUCTURES
    2.
    发明申请

    公开(公告)号:US20180203077A1

    公开(公告)日:2018-07-19

    申请号:US15918942

    申请日:2018-03-12

    CPC classification number: G01R33/075 G01R33/077 G01R33/1284

    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

    SPIN HALL EFFECT MAGNETIC STRUCTURES
    3.
    发明申请

    公开(公告)号:US20170082697A1

    公开(公告)日:2017-03-23

    申请号:US14946069

    申请日:2015-11-19

    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

    Spin hall effect magnetic structures

    公开(公告)号:US10302711B2

    公开(公告)日:2019-05-28

    申请号:US15918942

    申请日:2018-03-12

    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

    Spin-based logic device
    10.
    发明授权
    Spin-based logic device 有权
    基于旋转的逻辑器件

    公开(公告)号:US09240799B1

    公开(公告)日:2016-01-19

    申请号:US14532746

    申请日:2014-11-04

    Abstract: A device including a conductive layer configured to output a spin-current based on an analog input value, a plurality of magnetoresistive devices, and an encoder configured to output a digital value. Each of the magnetoresistive devices may be configured to receive a different reference voltage on a first side and the spin-current on a second side. The magnetization state of each of the magnetoresistive devices is set by respective reference voltages and the spin-current. The encoder may include a plurality of digital bits that is a digital representation of the analog input value based on the magnetization states of the magnetoresistive devices.

    Abstract translation: 一种包括配置成基于模拟输入值输出自旋电流的导电层的设备,多个磁阻器件以及被配置为输出数字值的编码器。 每个磁阻器件可以被配置为在第一侧接收不同的参考电压,并且在第二侧接收自旋电流。 每个磁阻器件的磁化状态由相应的参考电压和自旋电流来设定。 编码器可以包括多个数字位,其是基于磁阻器件的磁化状态的模拟输入值的数字表示。

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