公开(公告)号：US20080198027A1

公开(公告)日：2008-08-21

申请号：US11915255

申请日：2006-05-26

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: G08B17/103 ,  G01N21/00

CPC classification number: G08B17/103 ,  G01N21/3504 ,  G01N21/39 ,  G01N21/53 ,  G01N21/532 ,  G01N21/85 ,  G01N2021/1793 ,  G01N2021/392 ,  G01N2021/399 ,  G01N2201/0612 ,  G08B17/113

Abstract: The subject invention relates to a new alarm which is based on using a quarternary tunable Mid-IR laser to measure both particles and gas at the same time. The measurement is done within an area of which the gas of interest will absorb the Mid-IR radiation. By widely tuning the emission wavelength of the laser, several wavelengths can be measured in order to accurately find both gas composition and particle density with one laser based sensor. We tested a new device which use radiation between 2.27 μm and 2.316 μm. Methane gas reduces intensity of the radiation at certain wavelengths in this device, while particles/fog reduce intensity for all wavelengths. In this case, fog should not trigger an alarm, while methane leaks should. This can also be applied for CO and smoke in which one sensor will measure both parameters to sound an alarm instead of just one parameter.

Abstract translation: 本发明涉及一种新的报警器，其基于使用四分之一可调谐的中红外激光器同时测量颗粒和气体。 测量在感兴趣的气体将吸收中红外辐射的区域内进行。 通过广泛调谐激光器的发射波长，可以测量几个波长，以便通过一个基于激光的传感器精确地找到气体成分和颗粒密度。 我们测试了一种使用2.27 mam和2.316 mam之间的辐射的新设备。 甲烷气体降低了该装置中某些波长的辐射强度，而颗粒/雾降低了所有波长的强度。 在这种情况下，雾不应触发警报，而甲烷泄漏应该。 这也可以应用于CO和烟雾，其中一个传感器将测量两个参数以发出报警而不是仅一个参数。

公开(公告)号：US20140291810A1

公开(公告)日：2014-10-02

申请号：US14239967

申请日：2012-08-22

Applicant: Renato Bugge ,  Geir Myrvagnes ,  Tron Arne Nilsen

Inventor： Renato Bugge ,  Geir Myrvagnes ,  Tron Arne Nilsen

IPC: H01L21/02 ,  C30B23/02 ,  C30B23/06 ,  H01L29/205

CPC classification number: H01L21/02549 ,  C30B23/025 ,  C30B23/066 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/02617 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205

Abstract: The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilisation of dislocation faults in a surface layer of the non III-V material wafer in an orientation relative to an epitaxial material growing direction during growing of the III-V materials, wherein the location stabilised dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the III-V materials during the epitaxial growth process.

Abstract translation: 本发明涉及一种制造半导体材料的方法，其包括III-V族材料的外延生长，例如砷化镓（GaAs），例如非III-V族材料如硅（Si）衬底（晶片），以及 特别是对于在III-V材料生长期间相对于外延材料生长方向在非III-V材料晶片的表面层中提供位错故障的位置稳定的预处理步骤，其中位置稳定位错 取向在外延生长过程中提供了防止在III-V材料的生长方向上形成的穿透位错（堆垛层错）的屏障。

公开(公告)号：US20100290032A1

公开(公告)日：2010-11-18

申请号：US12744111

申请日：2008-10-02

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: G01N21/35 ,  G01N21/47 ,  G01N21/55 ,  G01N21/59

CPC classification number: B07C5/342 ,  G01N21/39 ,  G01N21/47 ,  G01N21/55 ,  G01N21/59 ,  G01N21/85 ,  G01N2021/845

Abstract: Method and system for measuring/depicting and determining/identifying one or more objects of different types of plastics, different types of fabrics or clothing, different types of glass, different types of food/groceries, different types of cardboard/paper/wooden products and/or different types of metals or similar materials. The method includes considering the reflected, scattered and/or transmitted light from the laser through the material, and determining the type of material from this.

Abstract translation: 用于测量/描绘和确定/识别不同类型的塑料，不同类型的织物或衣服，不同类型的玻璃，不同类型的食品/杂货，不同类型的纸板/纸/木制品的一个或多个物体的方法和系统，以及 /或不同类型的金属或类似材料。 该方法包括考虑通过材料的来自激光器的反射，散射和/或透射的光，并从中确定材料的类型。

公开(公告)号：US20120062871A1

公开(公告)日：2012-03-15

申请号：US13255946

申请日：2010-03-12

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: G01N21/55 ,  G01J3/00 ,  G01N21/47

CPC classification number: G01N21/39 ,  G01J3/0208 ,  G01J3/021 ,  G01J3/0237 ,  G01J3/108 ,  G01N21/3577 ,  G01N21/4738 ,  G01N21/53 ,  G01N21/55 ,  G01N33/1833 ,  G01N2021/1797

Abstract: The invention relates to measurement of chemical spillage, such as oil spillage, by the use of one or more IR-lasers, necessary optics and optical sensors. The measurements are performed by reflecting the emitted light from the laser(s) back from the chemical and registered by optical sensors. To accurately detecting the chemical the system utilizes at least three different wavelengths which are emitted from one or more lasers. The wavelengths are chosen so that the reflection from the chemical is different for at least three of these, and that it can be distinguished from the background.

Abstract translation: 本发明涉及通过使用一个或多个IR激光器，必要的光学元件和光学传感器来测量化学品溢出物，例如溢油。 通过将来自激光器的发射光从化学物质反射回并由光学传感器注册来进行测量。 为了准确地检测化学物质，系统利用从一个或多个激光器发出的至少三种不同的波长。 选择波长使得来自化学品的反射对于这些中的至少三个而言是不同的，并且其可以与背景区分开。

公开(公告)号：US07759672B2

公开(公告)日：2010-07-20

申请号：US11909277

申请日：2006-03-30

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: H01L33/00 ,  H01L29/08 ,  H01L21/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  G02B6/125 ,  G02B2006/1215 ,  G02B2006/12176 ,  H01S5/10 ,  H01S5/1003 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34346

Abstract: The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary AlGaInAsSb material. The structure is wet etched in order to form optical ridge waveguides. One such device has incorporated two waveguides which are connected through a new junction design which can be made by wet etching. In one design the junction and waveguides consists of wet etched AlO.90GaO.10AsSb cladding around a core of AlO.28GaO.72AsSb in which an active layer composed of AlO.22InO.22GaO.55AsSb/InO.29GaO.71AsSb quantum wells is embedded. The resulting device is a erdge junction laser which has single mode emission and emits a narrow line width. We made and tested a device in the 2.34 müm to 2.375 müm wavelength area and found it to have an emission line width of around 0.5 nm.

Abstract translation: 本发明涉及半导体光学器件的设计和处理。 该器件由至少四层III-V族化合物形成，其中一层由五元AlGaInAsSb材料组成。 为了形成光脊波导，将结构湿式蚀刻。 一个这样的器件已经并入了两个波导，这些波导通过可以通过湿蚀刻制成的新结点设计连接。 在一个设计中，结和波导由在AlO.28Ga0.72AsSb的核心周围的湿蚀刻的AlO.90Ga0.10AsSb包层组成，其中嵌入由AlO 22 InO 22 Ga 0.5 As Asbb / In 0.2 Ga 0.1 As Sb量子阱组成的有源层 。 所得到的器件是具有单模发射并发射窄线宽度的脉冲结激光器。 我们制造和测试了一个2.34 m到2.375 m的波长区域的器件，发现它的发射线宽度约为0.5 nm。

公开(公告)号：US20100141949A1

公开(公告)日：2010-06-10

申请号：US12666810

申请日：2008-06-02

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: G01J3/46

CPC classification number: G01N21/39 ,  G01N21/85 ,  G01N33/2829 ,  G01N2201/1293

Abstract: A method is shown for the analysis of hydrocarbon based fuels comprising the following steps: a) the use of a tunable diode laser (TDL) whereby several wavelengths of light can be emitted, b). transmission of said light through a transparent flow cell or flow chamber containing the fuel, c). measurement of the transmitted light with an optical detector positioned on the opposite site of the cell/chamber, d). detection of signals and storage on a computer memory, e). computer-based analysis of measurements, f). use of an algorithm and a chemical reference library for subsequent quantitative analysis of the hydrocarbon compounds.

Abstract translation: 示出了用于分析烃基燃料的方法，包括以下步骤：a）使用可以发射几种波长的光的可调谐二极管激光器（TDL），b）。 c）通过透明的流动池或含有燃料的流动室传输所述光。 用位于电池/腔室相对部位的光学检测器测量透射光，d）。 信号的检测和计算机存储器上的存储，e）。 基于计算机的测量分析，f）。 使用算法和化学参考文库进行烃化合物的后续定量分析。

公开(公告)号：US20060240670A1

公开(公告)日：2006-10-26

申请号：US10540896

申请日：2003-12-19

Applicant: Renato Bugge ,  Bjorn-Ove Fimland

Inventor： Renato Bugge ,  Bjorn-Ove Fimland

IPC: C09K13/00 ,  C23F1/00 ,  H01L21/302

CPC classification number: H01L21/30617 ,  H01L21/30612

Abstract: The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1−x−zGaxInzAs1−ySby with 0

Abstract translation: 本发明涉及用于本征的，n掺杂的或p掺杂的Al 1-x Zn x Ga x In x In x Ga x Ga x Ga x Ga x Ga x Ga x Ga x Ga x Ga x Ga x Ga x Ga x 其中0 与0

公开(公告)号：US09245748B2

公开(公告)日：2016-01-26

申请号：US14239967

申请日：2012-08-22

Applicant: Renato Bugge ,  Geir Myrvagnes ,  Tron Arne Nilsen

Inventor： Renato Bugge ,  Geir Myrvagnes ,  Tron Arne Nilsen

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/44 ,  H01L21/768 ,  H01L29/205 ,  C30B23/02 ,  C30B29/42 ,  C30B23/06

CPC classification number: H01L21/02549 ,  C30B23/025 ,  C30B23/066 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/02617 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205

Abstract: The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilization of dislocation faults in a surface layer of the non III-V material wafer in an orientation relative to an epitaxial material growing direction during growing of the III-V materials, wherein the location stabilized dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the III-V materials during the epitaxial growth process.

Abstract translation: 本发明涉及一种制造半导体材料的方法，其包括III-V族材料的外延生长，例如砷化镓（GaAs），例如非III-V族材料如硅（Si）衬底（晶片），以及 特别是对于在III-V材料生长期间相对于外延材料生长方向在非III-V材料晶片的表面层中提供位错故障的位置稳定的预处理步骤，其中位置稳定位错 取向在外延生长过程中提供了防止在III-V材料的生长方向上形成的穿透位错（堆垛层错）的屏障。

公开(公告)号：US20110096332A1

公开(公告)日：2011-04-28

申请号：US12736390

申请日：2008-03-04

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: G01B9/02

CPC classification number: H01S5/22 ,  G01N21/359 ,  G01N21/39 ,  G01N2021/399 ,  H01S5/0612 ,  H01S5/06216 ,  H01S5/0654 ,  H01S5/0655 ,  H01S5/1003 ,  H01S5/3235

Abstract: The invention relates to design of an interferometric laser and a method for analyzing gas with this, preferably methane, ethane, propane, butane, pentane, hexane, heptane, ethylene, dichloromethane, isooctane, benzene, xylenes, hydrazine, formaldehyde, N2O, NO2, CO2, CO, HF, O3, HI, NH3, SO, HBr, H2S, HCN, preferably a tunable interferometric laser which can sweep a spectrum.

Abstract translation: 本发明涉及干涉式激光器的设计以及用于分析气体的方法，优选甲烷，乙烷，丙烷，丁烷，戊烷，己烷，庚烷，乙烯，二氯甲烷，异辛烷，苯，二甲苯，肼，甲醛，N 2 O，NO 2 ，CO 2，CO，HF，O 3，HI，NH 3，SO，HBr，H 2 S，HCN，优选可扫描光谱的可调干涉激光。

公开(公告)号：US20090090902A1

公开(公告)日：2009-04-09

申请号：US11909277

申请日：2006-03-30

Applicant: Renato Bugge

Inventor： Renato Bugge

IPC: H01L29/06 ,  H01L21/02

CPC classification number: H01S5/22 ,  B82Y20/00 ,  G02B6/125 ,  G02B2006/1215 ,  G02B2006/12176 ,  H01S5/10 ,  H01S5/1003 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34346

Abstract: The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary AlGalnAsSb material. The structure is wet etched in order to form optical ridge waveguides. One such device has incorporated two waveguides which are connected through a new junction design which can be made by wet etching. In one design the junction and waveguides consists of wet etched AlO .90GaO .10AsSb cladding around a core of AlO .28GaO .72AsSb in which an active layer composed of AlO.22InO.22GaO.55AsSb/InO.29GaO.71AsSb quantum wells is embedded. The resulting device is a erdge junction laser which has single mode emission and emits a narrow line width. We made and tested a device in the 2.34 müm to 2.375 müm wavelength area and found it to have an emission line width of around 0, 5 nm.

Abstract translation: 本发明涉及半导体光学器件的设计和处理。 该装置由至少四层III-V族化合物形成，其中一层由五元AlAlAlAsSb材料组成。 为了形成光脊波导，将结构湿式蚀刻。 一个这样的器件已经并入了两个波导，这些波导通过可以通过湿蚀刻制成的新结点设计连接。 在一个设计中，结和波导由AlO.28Ga0.72AsSb的核心周围的湿蚀刻的AlO.90Ga0.10AsSb包层组成，其中嵌入由AlO 22 InO 22 Ga 0.5 AsAs Sb / In 0.2 Ga 0.1 As Sb量子阱组成的有源层 。 所得到的器件是具有单模发射并发射窄线宽度的脉冲结激光器。 我们制造和测试了一个2.34 m到2.375 m的波长区域的器件，发现它的发射线宽度大约在0,5 nm。