公开(公告)号：US20160254808A1

公开(公告)日：2016-09-01

申请号：US14634195

申请日：2015-02-27

Applicant: Renesas Electronics America Inc.

Inventor： Tetsuo Sato ,  Koichi Yamazaki

IPC: H03K17/687 ,  H03K17/74 ,  H02M3/158 ,  H03K17/567

CPC classification number: H03K17/6871 ,  H02M7/003 ,  H03K17/04163 ,  H03K17/567 ,  H03K17/74 ,  Y02B70/1483

Abstract: An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.

Abstract translation: 一种包括连接到电感器的第一装置的装置。 第一器件包括第一碳化硅（SiC）结栅场效应晶体管（JFET），连接到第一SiC JFET的栅极和漏极的第一SiC肖特基势垒二极管（SBD）和第一硅（Si） 连接的晶体管将电流传输到第一SiC JFET的源极。 电感器输入端连接到第一SiC JFET的漏极。

公开(公告)号：US10050620B2

公开(公告)日：2018-08-14

申请号：US14634195

申请日：2015-02-27

Applicant: Renesas Electronics America Inc.

Inventor： Tetsuo Sato ,  Koichi Yamazaki

IPC: H02M3/155 ,  H03K17/687 ,  H03K17/567 ,  H03K17/74 ,  H03K17/0416 ,  H02M7/00

Abstract: An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.

公开(公告)号：US10411698B2

公开(公告)日：2019-09-10

申请号：US16102516

申请日：2018-08-13

Applicant: RENESAS ELECTRONICS AMERICA INC.

Inventor： Tetsuo Sato ,  Koichi Yamazaki

IPC: H02M3/155 ,  H03K17/687 ,  H03K17/567 ,  H03K17/74 ,  H03K17/0416 ,  H02M7/00

Abstract: An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.