-
公开(公告)号：US20170124482A1
公开(公告)日：2017-05-04
申请号：US15189373
申请日：2016-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jiho YOO , Youngchun KWON , Kyungdoc KIM , Jaikwang SHIN , Hyosug LEE , Younsuk CHOI
CPC classification number: G06N20/00 , G06F16/245 , G06F17/5009 , G06N7/005 , G16C20/30 , G16C20/70
Abstract: A method for searching a new material includes: performing a learning on a material model, which is modeled based on a known material; determining a candidate material by inputting a targeted physical property to a result of the learning; and determining the new material from the candidate material.
-
公开(公告)号：US20180032663A1
公开(公告)日：2018-02-01
申请号：US15664960
申请日：2017-07-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jiho YOO , Seokho KANG , Youngchun KWON , Kyung doc KIM , Jaikwang SHIN , Hyosug LEE , Younsuk CHOI
CPC classification number: G16B15/00 , G06N3/0445 , G06N5/04 , G06N20/00 , G16B40/00
Abstract: A structure-generating method for generating a structure candidate of a new material including: by a structure-generating processor: performing machine learning on a machine learning model, wherein the machine learning model is configured to provide a result based on a descriptor of a material, a physical property of the material, and a structure of the material; and generating a structure candidate of the new material based on the result of the machine learning, wherein the new material has a target physical property, and wherein the descriptor of the material, the physical property of the material, and the structure of the material are stored in a database.
-
公开(公告)号：US20210241176A1
公开(公告)日：2021-08-05
申请号：US17238460
申请日：2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jiho YOO , Youngchun KWON , Kyungdoc KIM , Jaikwang SHIN , Hyosug LEE , Younsuk CHOI
IPC: G06N20/00 , G06N7/00 , G06F16/245 , G16C20/30 , G06F30/20
Abstract: A method for searching a new material includes: performing a learning on a material model, which is modeled based on a known material; determining a candidate material by inputting a targeted physical property to a result of the learning; and determining the new material from the candidate material.
-
公开(公告)号：US20160180983A1
公开(公告)日：2016-06-23
申请号：US14887915
申请日：2015-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinyoung HWANG , Kwanghee KIM , Chan KWAK , Hyeon Cheol PARK , Weonho SHIN , Yun Sung WOO , Jae-Young CHOI , Sungjin KIM , Hyosug LEE
CPC classification number: H01B1/22
Abstract: A transparent electrode including: a substrate; an undercoat disposed on the substrate; a conductive film disposed on the undercoat and including a plurality of conductive metal nanowires and a carboxyl group-containing cellulose; and an overcoat disposed on the conductive film. Also an electronic device including the transparent electrode.
Abstract translation: 1.一种透明电极，包括：基板; 设置在基板上的底涂层; 导电膜设置在底涂层上并且包括多个导电金属纳米线和含羧基的纤维素; 和设置在导电膜上的外涂层。 还有一种包括透明电极的电子器件。
-
公开(公告)号：US20160018845A1
公开(公告)日：2016-01-21
申请号：US14802599
申请日：2015-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan KWAK , Jae-Young CHOI , Kwang Hee KIM , Jong Wook ROH , Hyeon Cheol PARK , Weon Ho SHIN , Yun Sung WOO , Hyosug LEE , Jinyoung HWANG
CPC classification number: G06F1/16 , G06F3/0416 , G06F3/044 , G06F2203/04103 , H05K1/0274 , H05K1/0298 , H05K1/09
Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.
Abstract translation: 电极结构包括：第一非导电层; 设置在所述第一非导电层上的第一导电层; 设置在所述第一导电层上的第二非导电层; 设置在所述第二非导电层上的第二导电层; 以及设置在第二导电层上的第三非导电层，其中第一导电层和第二导电层中的至少一个包括二维导电材料。
-
Patent Agency Ranking
公开(公告)号：US20150360944A1
公开(公告)日：2015-12-17
申请号：US14732951
申请日：2015-06-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Il KIM , Se Yun KIM , Kyoung-Seok MOON , Sung Woo HWANG , Yoon Chul SON , Hyosug LEE
Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: M1Te2 Chemical Formula 1 wherein M1 is titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb); and M2Se2 Chemical Formula 2 wherein M2 is vanadium (V) or tantalum (Ta).
Abstract translation: 一种导电薄膜，其包含化学式1或化学式2表示的化合物，并具有层状晶体结构：M1Te2化学式1其中M1为钛（Ti），锆（Zr），铪（Hf），钒（V） ，钽（Ta）或铌（Nb）; 和M2Se2化学式2，其中M2是钒（V）或钽（Ta）。
-
公开(公告)号：US20200333827A1
公开(公告)日：2020-10-22
申请号：US16917912
申请日：2020-07-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan KWAK , Jae-Young CHOI , Kwang Hee KIM , Jong Wook ROH , Hyeon Cheol PARK , Weon Ho SHIN , Yun Sung WOO , Hyosug LEE , Jinyoung HWANG
Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.
-
公开(公告)号：US20170092832A1
公开(公告)日：2017-03-30
申请号：US15197849
申请日：2016-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunkyung LEE , Byoung-Lyong CHOI , Hyosug LEE , Younsuk CHOI
IPC: H01L35/30
CPC classification number: H01L35/30
Abstract: An energy transfer structure includes an energy transfer material and a vacant space part provided in the energy transfer material where the vacant space part is provided through a region occupied with the energy transfer material or from a side of the region occupied with the energy transfer material toward an inside with a predetermined depth.
-
公开(公告)号：US20160141067A1
公开(公告)日：2016-05-19
申请号：US14940223
申请日：2015-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kimoon LEE , Sang Il KIM , Se Yun KIM , Sung Woo HWANG , Woojin LEE , Hee Jung PARK , Yoon Chul SON , Hyosug LEE , Doh Won JUNG , Youngjin CHO , Jae-Young CHOI
IPC: H01B1/06
CPC classification number: H01B1/02 , C01B19/002 , C01B19/007 , C01P2002/20 , C01P2002/30 , C01P2002/90 , C30B7/00 , C30B29/46 , C30B29/60 , C30B29/605 , C30B29/607 , H01B1/06 , H01L21/02417 , H01L21/02573 , H01L21/02609
Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.
Abstract translation: 一种导电薄膜，包括：包含由化学式1表示并具有层状晶体结构的化合物的材料，其中Me为Al，Ga，In，Si，Ge，Sn，A的MemAa化学式1为S，Se，Te ，或它们的组合，m和a各自独立地选择为使化学式1的化合物为中性的数字; 以及配置在化学式1的化合物中的掺杂剂，其中所述掺杂剂是与Me不同的金属掺杂剂，并且具有大于Me的氧化态的氧化态，具有更大数量化合价的非金属掺杂剂 电子与化学式1中A的多价价电子或其组合，其中化学式1的化合物包括包含Me轨道的价电子的化学键。
-
公开(公告)号：US20150344307A1
公开(公告)日：2015-12-03
申请号：US14719428
申请日：2015-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyoung-Seok MOON , Sang Il KIM , Se Yun KIM , Hee Jung PARK , Hyosug LEE , Jae-Young CHOI
IPC: C01B19/04
CPC classification number: C01B19/007 , C01B19/04 , C01P2006/40 , H01B1/06 , H01L21/02562 , Y02E10/50 , Y02E10/54
Abstract: An electrically conductive film including a compound represented by Chemical Formula 1 and having a layered crystal structure: MeCh2 Chemical Formula 1 wherein, Me is Ru, Os, Re, Rh, Ir, Pd, Pt, Cu, Ag, or Au, and Ch is sulfur, selenium, tellurium, or a combination thereof.
Abstract translation: 含有化学式1表示的具有层状晶体结构的化合物的导电膜：MeCh2化学式1其中Me为Ru，Os，Re，Rh，Ir，Pd，Pt，Cu，Ag或Au，Ch 是硫，硒，碲或其组合。
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.016 seconds)
