公开(公告)号：US09959947B2

公开(公告)日：2018-05-01

申请号：US14499624

申请日：2014-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inhyuk Son ,  Hyunjae Song ,  Inyong Song ,  Jaeman Choi ,  Seungsik Hwang ,  Junhwan Ku ,  Jonghwan Park ,  Yeonji Chung

IPC: H01B1/04 ,  H01B1/24 ,  B82Y30/00 ,  H01M4/134 ,  H01M4/36 ,  H01M4/38 ,  H01M4/48 ,  H01M4/587 ,  H01B13/00 ,  H01M4/04 ,  H01M4/1393 ,  H01M4/62

CPC classification number: H01B1/04 ,  H01B13/0016 ,  H01B13/0026 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/366 ,  H01M4/386 ,  H01M4/48 ,  H01M4/587 ,  H01M4/625 ,  Y10T428/292

Abstract: A composite including: silicon (Si); a silicon oxide of the formula SiOx, wherein 0

公开(公告)号：US10692622B2

公开(公告)日：2020-06-23

申请号：US15928397

申请日：2018-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inhyuk Son ,  Hyunjae Song ,  Inyong Song ,  Jaeman Choi ,  Seungsik Hwang ,  Junhwan Ku ,  Jonghwan Park ,  Yeonji Chung

IPC: H01B1/04 ,  H01M4/134 ,  B82Y30/00 ,  B82Y40/00 ,  H01M4/36 ,  H01M4/38 ,  H01M4/48 ,  H01M4/587 ,  H01B13/00 ,  H01M4/04 ,  H01M4/1393 ,  H01M4/62

Abstract: A composite including: silicon (Si); a silicon oxide of the formula SiOx, wherein 0

公开(公告)号：US10438715B2

公开(公告)日：2019-10-08

申请号：US14808360

申请日：2015-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyoung Cho ,  Inyong Song ,  Changseung Lee ,  Chan Kwak ,  Jaekwan Kim ,  Jooho Lee ,  Jinyoung Hwang

IPC: H01B1/22 ,  B82Y10/00 ,  B82Y40/00 ,  C23F1/14 ,  C23F1/30 ,  G06F3/041 ,  H01L29/41 ,  G06F3/044 ,  H01L31/0224 ,  C23F1/02 ,  C23F1/40 ,  H01L29/06 ,  H01L33/42

Abstract: Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.