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公开(公告)号：US12272704B2
公开(公告)日：2025-04-08
申请号：US17744045
申请日：2022-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyeongjae Byeon , Jinyoung Kim , Seungjoo Nah , Heegeun Jeong
IPC: H01L27/146
Abstract: An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.
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公开(公告)号：US20250053312A1
公开(公告)日：2025-02-13
申请号：US18587279
申请日：2024-02-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Park , Jinyoung Kim , Sehwan Park , Jisang Lee
Abstract: A nonvolatile memory device includes a memory block, a page buffer circuit and a control circuit. The page buffer circuit is connected to the cell strings through bit-lines. The control circuit controls a read operation by: latching a first sensing data and a second sensing data in the page buffer circuit by performing a first read operation on a selected word-line designated by an access address based on a read voltage set; latching a third sensing data in the page buffer circuit by performing a second read operation on an aggressor word-line adjacent to the selected word-line, based on at least one adjacent read voltage; selecting one of the first sensing data and the second sensing data as a hard decision data based on a program state of the third sensing data; and generating a soft decision data by using the first sensing data and the second sensing data.
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公开(公告)号：US12199119B2
公开(公告)日：2025-01-14
申请号：US17668524
申请日：2022-02-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongchul Lee , Jinyoung Kim , Beomsuk Lee , Kwansik Cho , Hochul Ji
IPC: H01L27/146
Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface. The first surface includes an element isolation trench. An element isolation layer is arranged inside the element isolation trench. The element isolation layer defines an active region. A gate electrode is arranged on the first surface of the semiconductor substrate. An interlayer insulating layer is arranged on the first surface of the semiconductor substrate and covers the gate electrode. A ground contact is configured to penetrate the element isolation layer and the interlayer insulating layer and contacts the semiconductor substrate. A color filter is arranged on the second surface of the semiconductor substrate.
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公开(公告)号：US12181953B2
公开(公告)日：2024-12-31
申请号：US18374717
申请日：2023-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong Kim , Jinyoung Kim , Sehwan Park , Hyun Seo , Sangwan Nam
Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
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公开(公告)号：US12131789B2
公开(公告)日：2024-10-29
申请号：US17847545
申请日：2022-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junho Kim , Jinyoung Kim , Sehwan Park , Seoyoung Lee , Jisang Lee , Joonsuc Jang
CPC classification number: G11C16/3459 , G11C16/08 , G11C16/102 , G11C16/26 , G11C16/3404
Abstract: Aggressor memory cells connected to one or more aggressor wordlines are grouped into aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, where the aggressor wordlines are adjacent to a selected wordline corresponding to a read address among wordlines of a memory block. Selected memory cells connected to the selected wordline are grouped into a selected cell groups respectively corresponding to the aggressor cell groups. Group read conditions respectively corresponding to the selected cell groups are determined and group read operations are performed with respect to the plurality of selected cell groups based on the group read conditions. The read errors are reduced by grouping the selected memory cells into the selected cell groups according to the change of operation environments.
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Patent Agency Ranking
公开(公告)号：US11868647B2
公开(公告)日：2024-01-09
申请号：US17522578
申请日：2021-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngdeok Seo , Jinyoung Kim , Sehwan Park , Ilhan Park
IPC: G06F3/06
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679
Abstract: A nonvolatile memory device includes a memory block including a memory area, an on-chip valley search (OVS) circuit performing an OVS sensing operation on the memory block, and a buffer memory storing at least one variation table including variation information of a threshold voltage of memory cells, obtained from the OVS sensing operation. A reading operation including an OVS sensing operation and a main sensing operation on the memory area is performed in response to a read command applied by a memory controller, the OVS sensing operation is performed at an OVS sensing level, and the main sensing operation is performed at a main sensing level reflecting the variation information. In the nonvolatile memory device, correction accuracy for deterioration of a word line threshold voltage may be improved, and a burden on a memory controller may be reduced.
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公开(公告)号：US11763903B2
公开(公告)日：2023-09-19
申请号：US17498832
申请日：2021-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sehwan Park , Jinyoung Kim , Youngdeok Seo , Dongmin Shin
CPC classification number: G11C16/3459 , G11C7/1057 , G11C7/1084 , G11C11/54 , G11C16/0433 , G11C16/102 , G11C16/14 , G11C16/26 , G11C16/3445 , G11C16/3495
Abstract: A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.
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公开(公告)号：US11556415B2
公开(公告)日：2023-01-17
申请号：US17397321
申请日：2021-08-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sehwan Park , Jinyoung Kim , Ilhan Park , Youngdeok Seo
Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on the cell count information when an error in read data, received from the memory device performing a read operation is not corrected. A memory controller may control the memory device to execute a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When an error in the read data is successfully corrected, the memory controller may update a table, stored in the memory controller, using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.
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公开(公告)号：US11475948B2
公开(公告)日：2022-10-18
申请号：US16999189
申请日：2020-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongryul Kim , Jinyoung Kim , Taehui Na
Abstract: A memory device and a method of operating the same. The memory device includes a memory cell array including a plurality of memory cells disposed in an area where a plurality of word lines and a plurality of bit lines cross each other; a row decoder including row switches and configured to perform a selection operation on the plurality of word lines; a column decoder including column switches and configured to perform a selection operation on the plurality of bit lines; and a control logic configured to control, in a data read operation, a precharge operation to be performed on a selected word line in a word line precharge period, and to control a precharge operation to be performed on a selected bit line in a bit line precharge period; wherein a row switch connected to the selected word line is weakly turned on in the bit line precharge period.
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公开(公告)号：US10739992B2
公开(公告)日：2020-08-11
申请号：US14812346
申请日：2015-07-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinwan An , Jinyoung Kim , Yunjeong Choi , Yonggil Han
IPC: G06F3/01 , G06F3/048 , G06F3/0484 , G06F3/0488 , G06F3/023
Abstract: An electronic device and an operation method thereof are provided. The method includes displaying information on a touch screen of the electronic device by operating a first application, displaying user interface of a second application, detecting an input through the user interface, displaying at least one recommendation object corresponding to the input among the information on the touch screen, at least partly in response to the input, receiving an input of selecting at least one of the at least one recommendation object, and displaying the recommendation object on the user interface, in response to the selecting input.
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