公开(公告)号：US20230094273A1

公开(公告)日：2023-03-30

申请号：US17697240

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngmin LEE ,  Soongmann SHIN

IPC: G11C29/36 ,  G11C29/46 ,  G11C29/12 ,  G11C29/18 ,  G11C29/56

Abstract: Example embodiments provide for a storage device that includes a storage controller including a plurality of analog circuits and at least one nonvolatile memory device including a first region and a second region. The at least one nonvolatile memory device stores user data in the second region and stores trimming control codes in the first region as a compensation data set. The trimming control codes are configured to compensate for offsets of the plurality of analog circuits and are obtained through a wafer-level test on the storage controller. The storage controller, during a power-up sequence, reads the compensation data set from the first region of the at least one nonvolatile memory device, stores the read compensation data set therein, and adjusts the offsets of the plurality of analog circuits based on the stored compensation data set.