公开(公告)号：US20160124299A1

公开(公告)日：2016-05-05

申请号：US14528174

申请日：2014-10-30

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dan Yu ,  Aaron Bowser ,  Yi Liu

IPC: G03F1/30 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G03F1/30 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70558 ,  G03F7/70625 ,  G03F9/7007

Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.

Abstract translation: 本文描述和要求保护的实施方案包括光刻技术以减轻所引起的传输强度的不平衡。 在一个实现中，一种方法包括曝光交替相移掩模（Alt-PSM）和修剪蒙版，其中修剪蒙版的曝光位置相对于Alt-PSM的曝光位置移动。

公开(公告)号：US09341939B1

公开(公告)日：2016-05-17

申请号：US14528174

申请日：2014-10-30

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dan Yu ,  Aaron Bowser ,  Yi Liu

IPC: G03F1/30 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G03F1/30 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70558 ,  G03F7/70625 ,  G03F9/7007

Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.

Abstract translation: 本文描述和要求保护的实施方案包括光刻技术以减轻所引起的传输强度的不平衡。 在一个实现中，一种方法包括曝光交替相移掩模（Alt-PSM）和修剪蒙版，其中修剪蒙版的曝光位置相对于Alt-PSM的曝光位置移动。

公开(公告)号：US09482965B2

公开(公告)日：2016-11-01

申请号：US15144368

申请日：2016-05-02

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dan Yu ,  Aaron Bowser ,  Yi Liu

IPC: G03F1/30 ,  G03F1/50 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F1/30 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70558 ,  G03F7/70625 ,  G03F9/7007

Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.

公开(公告)号：US20160246183A1

公开(公告)日：2016-08-25

申请号：US15144368

申请日：2016-05-02

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Dan Yu ,  Aaron Bowser ,  Yi Liu

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F1/30 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70558 ,  G03F7/70625 ,  G03F9/7007

Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.