公开(公告)号：US20200273981A1

公开(公告)日：2020-08-27

申请号：US16871268

申请日：2020-05-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE ,  Gary H. LOECHELT

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/739 ,  H01L21/306 ,  H01L29/47 ,  H01L21/311 ,  H01L21/265 ,  H01L29/66 ,  H01L29/872

Abstract: A method of forming a power semiconductor device includes providing an epi layer over a substrate; forming a well at an upper portion of the epi layer; forming a pillar below the well and spaced apart from the well to define a Schottky contact region; etching a trench into the epi layer, the trench having a sidewall and a base, a portion of the sidewall of the trench corresponding to the Schottky contact region; forming a metal contact layer over the sidewall and the base of the trench, the metal contact layer forming a Schottky interface with the epi layer at the Schottky contact region; and forming a gate electrode and first and second electrodes.

公开(公告)号：US20190074385A1

公开(公告)日：2019-03-07

申请号：US15697276

申请日：2017-09-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE ,  Kwangwon LEE ,  Jaegil LEE

IPC: H01L29/868 ,  H01L29/872 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/868 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/872

Abstract: In a general aspect, a device can include a substrate, a first pillar of a first conductivity type, a second pillar of a second conductivity type, the first pillar and the second pillar being alternately disposed, and a metal layer having a first portion disposed on the first pillar and a second portion disposed on the second pillar. The first portion of the metal layer can be wider than the second portion of the metal layer.

公开(公告)号：US20190386129A1

公开(公告)日：2019-12-19

申请号：US16009484

申请日：2018-06-15

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE ,  Gary H. LOECHELT

IPC: H01L29/78 ,  H01L29/872 ,  H01L29/10 ,  H01L29/06 ,  H01L29/739 ,  H01L21/306 ,  H01L29/47 ,  H01L21/311 ,  H01L21/265 ,  H01L29/66

Abstract: A power semiconductor device includes a semiconductor layer having a first conductivity type. A trench is defined within the semiconductor layer, the trench having an opening, a sidewall and a base. A pillar is provided below the trench and has a second conductivity type that is different than the first conductivity type. A metal layer is provided over the sidewall of the trench, the metal layer contacting the semiconductor layer at the sidewall of the trench to form a Schottky interface of a Schottky diode. A first electrode is provided over a first side of the semiconductor layer. A second electrode is provided over a second side of the semiconductor layer.

公开(公告)号：US20190267496A1

公开(公告)日：2019-08-29

申请号：US16406228

申请日：2019-05-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE ,  Kwangwon LEE ,  Jaegil LEE

IPC: H01L29/868 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/872

Abstract: In a general aspect, a method can include forming a first pillar of a first conductivity type and a second pillar of a second conductivity type, alternately disposed with the first pillar. The second pillar can be in direct contact with the first pillar. The method can also include forming an implant of the second conductivity type in an upper portion of the second pillar. The implant can have a doping concentration that is higher than a doping concentration of a lower portion of the second pillar. The method can further include forming a Schottky metal layer having a first portion directly disposed on an upper surface of the first pillar and a second portion directly disposed on the implant along an upper surface of the second pillar. The first portion of the Schottky metal layer can be wider than the second portion of the Schottky metal layer.

公开(公告)号：US20210273091A1

公开(公告)日：2021-09-02

申请号：US16802718

申请日：2020-02-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A power semiconductor device includes a semiconductor layer having a first conductivity type. A pillar is provided in the semiconductor layer and has a second conductivity type that is different than the first conductivity type. A first trench gate is provided in the pillar proximate to a first vertical edge of the pillar. A second trench gate is provided in the pillar proximate to a second vertical edge of the pillar, the second vertical edge being on an opposing side of the pillar of the first vertical edge. A first electrode is provided over a first side of the semiconductor layer. A second electrode is provided over a second side of the semiconductor layer.