公开(公告)号：US20200098857A1

公开(公告)日：2020-03-26

申请号：US16141761

申请日：2018-09-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gary H. LOECHELT ,  Gordon M. GRIVNA ,  Jaegil LEE ,  MinKyung KO ,  Youngchul CHOI

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L21/762 ,  H01L29/66 ,  H01L21/225 ,  H01L21/764 ,  H01L29/78

Abstract: A transistor device includes an n-doped pillar and a p-doped pillar forming a super-junction structure on a substrate. An isolation structure is disposed in a trench between the n-doped pillar and the p-doped pillar, and a source and a gate are disposed on the n-doped pillar. The isolation structure can include an air gap encapsulated in the trench by an oxide plug. The isolation structure can include an epi liner disposed on surfaces of the n-doped pillar and the p-doped pillar.