公开(公告)号：US20180374995A1

公开(公告)日：2018-12-27

申请号：US16120851

申请日：2018-09-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Shingo EGUCHI ,  Mitsuo MASHIYAMA ,  Masatoshi KATANIWA ,  Hironobu SHOJI ,  Masataka NAKADA ,  Satoshi SEO

IPC: H01L33/44 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

公开(公告)号：US20170250204A1

公开(公告)日：2017-08-31

申请号：US15594813

申请日：2017-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Masahiro WATANABE ,  Hajime TOKUNAGA

IPC: H01L27/12 ,  H01L21/316 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/105 ,  H01L29/786 ,  H01L51/50

CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US20150380364A1

公开(公告)日：2015-12-31

申请号：US14847461

申请日：2015-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI

IPC: H01L23/00 ,  H01L29/786

CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

Abstract translation: 金属氧化物层与覆盖晶体管的层间绝缘层接触，并且具有包括具有非晶结构的第一金属氧化物层和具有多晶结构的第二金属氧化物层的层叠结构。 在第一金属氧化物层中，与结晶状态的金属氧化物层相比，不存在晶粒边界，栅格间隔宽， 因此，第一金属氧化物层容易捕获晶格之间的水分。 在具有多晶结构的第二金属氧化物层中，除了晶界部分之外的晶体部分具有致密的结构和极低的透湿性。 因此，包括第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构可以有效地防止水分渗入晶体管。

公开(公告)号：US20250146126A1

公开(公告)日：2025-05-08

申请号：US19018112

申请日：2025-01-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H10D30/67 ,  H10D62/80 ,  H10D99/00

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US20250015197A1

公开(公告)日：2025-01-09

申请号：US18892792

申请日：2024-09-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20170323789A1

公开(公告)日：2017-11-09

申请号：US15657273

申请日：2017-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20250151333A1

公开(公告)日：2025-05-08

申请号：US19017973

申请日：2025-01-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI

IPC: H10D30/67 ,  H10D30/01 ,  H10K59/12 ,  H10K59/121

Abstract: A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.

公开(公告)号：US20230420568A1

公开(公告)日：2023-12-28

申请号：US18243688

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/66969 ,  H01L27/1229 ,  H01L27/1225 ,  H01L27/1233 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L29/78672 ,  H01L21/02631

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20230050036A1

公开(公告)日：2023-02-16

申请号：US17967001

申请日：2022-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20210230740A1

公开(公告)日：2021-07-29

申请号：US17228847

申请日：2021-04-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/64 ,  C04B35/453 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.