公开(公告)号：US20240234618A1

公开(公告)日：2024-07-11

申请号：US18140692

申请日：2023-04-28

Applicant: SENSORTEK TECHNOLOGY CORP.

Inventor： Ching-Kuan Chiu

IPC: H01L31/113

CPC classification number: H01L31/1136

Abstract: The present invention provides an optoelectronic semiconductor structure, which comprises a first-type semiconductor substrate, a second-type semiconductor light-receiving region, and a second-type semiconductor conduction region. The first-type semiconductor substrate includes a top surface. The second-type semiconductor conduction region is used to conduct a photocurrent. The second-type semiconductor light-receiving region is located on the periphery of the second-type semiconductor conduction region. The second-type semiconductor conduction region and the second-type semiconductor light-receiving region are spaced by a distance. By dividing into the semiconductor conduction region and the light-receiving region, the effect of reducing the junction capacitance while maintaining the light-receiving capability can be achieved and thus further enhancing the photoelectric conversion efficiency of the optoelectronic semiconductor structure.