公开(公告)号：US20250155589A1

公开(公告)日：2025-05-15

申请号：US18816954

申请日：2024-08-27

Applicant: Shandong University

Inventor： Quanqi Shi ,  Chenyao Han ,  Shuo Wang ,  Xianghong Jia ,  Xiaoli Wang

IPC: G01T3/00 ,  G01T3/02

Abstract: The present disclosure belongs to the technical field of neutron detection, and it relates to a structure for slow neutron detection and a method for energy spectrum measurement of slow neutrons, wherein the structure for slow neutron detection comprises: a shielding barrel, which is configured as square with an opening; and a detector unit, which is a slow neutron detector with position resolution function, wherein the detector unit is completely wrapped in the shielding barrel, and the detector unit is placed close to one of the sides of the shielding barrel that is perpendicular to the open side of the shielding barrel. When the structure for slow neutron detection moves at a set speed, the incident energy spectrum of slow neutrons can be inversely extrapolated on the basis of the number of slow neutrons at different depths.

公开(公告)号：US11822026B2

公开(公告)日：2023-11-21

申请号：US18107491

申请日：2023-02-08

Applicant: SHANDONG UNIVERSITY

Inventor： Shuo Wang ,  Chenyao Han ,  Quanqi Shi ,  Xiaoli Wang ,  Pengzhi He

IPC: G01T3/00 ,  G01T3/08

CPC classification number: G01T3/003 ,  G01T3/085

Abstract: The present application relates to a detection structure for fast neutrons and a method for acquiring a neutron energy spectrum, the detection structure for fast neutrons comprises seven semiconductor detection units and a conversion layer made of a hydrogen-containing material, the seven semiconductor detection units comprise a first, a second, a third, a fourth, a fifth, a sixth and a seventh semiconductor detection unit arranged sequentially, the first, the fourth and the seventh semiconductor detection unit constitute an anticoincidence detection group, the second and the third semiconductor detection unit constitute a neutral particle background detection group, the fifth and the sixth semiconductor detection unit constitute a recoil proton detection group, the conversion layer is disposed between the fourth and the fifth semiconductor detection unit, incident neutrons collision with hydrogen atomic nuclei and generate the recoil protons. The present application can effectively reduce influence of background signals on the measurement and improve accuracy of the inversed neutron energy spectrum.