公开(公告)号：US20250151352A1

公开(公告)日：2025-05-08

申请号：US19017371

申请日：2025-01-10

Applicant: SHI-ATEX Co., Ltd.

Inventor： Hitoshi SAKANE ,  Masashi KATO ,  Shunta HARADA

IPC: H10D62/834 ,  H01L21/04 ,  H10D30/01 ,  H10D30/66 ,  H10D62/832

Abstract: A semiconductor device includes a substrate formed of silicon carbide and a semiconductor layer of a first conductivity type provided on a first surface of the substrate. By irradiation with hydrogen ions, a high concentration hydrogen region having a hydrogen concentration of higher than 1015/cm3 is formed over a thickness of 1 μm or more. At least a part of the high concentration hydrogen region is formed in the semiconductor layer of the first conductivity type, and a lower end of the high concentration hydrogen region having a hydrogen concentration of 1015/cm3 or lower is positioned in the substrate or in the semiconductor layer.