公开(公告)号：US20220250908A1

公开(公告)日：2022-08-11

申请号：US17595708

申请日：2021-02-17

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO ,  Hideyuki KURIHARA

IPC: C01B17/56 ,  B65D85/84

Abstract: Provided is a sulfur dioxide mixture that hardly corrodes metals. A sulfur dioxide mixture contains sulfur dioxide and water. The sulfur dioxide mixture is filled in a filling container in such a manner that a gas phase and a liquid phase exist, and the moisture concentration of the gas phase is from 0.005 mole ppm to less than 5,000 mole ppm.

公开(公告)号：US20220220612A1

公开(公告)日：2022-07-14

申请号：US17615308

申请日：2020-11-04

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO

IPC: C23C16/44 ,  C23C16/56

Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a fluorine-containing compound gas.

公开(公告)号：US20180354790A1

公开(公告)日：2018-12-13

申请号：US15781725

申请日：2016-12-01

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO ,  Yasuyuki HOSHINO

IPC: C01B7/07 ,  F17C3/12

CPC classification number: C01B7/0706 ,  C01B7/01 ,  F17C3/12 ,  F17C2203/0643 ,  Y02E60/321

Abstract: There is provided a hydrogen chloride mixture hardly corroding a metal. The hydrogen chloride mixture contains hydrogen chloride and water. The hydrogen chloride mixture is filled into a filling container so that a part of the hydrogen chloride mixture is liquid. The concentration of water in a gas phase in the hydrogen chloride mixture is 0.001 mol ppm or more and less than 4.5 mol ppm.

公开(公告)号：US20220157599A1

公开(公告)日：2022-05-19

申请号：US17595955

申请日：2020-11-04

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO

IPC: H01L21/02 ,  C23C16/44

Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a hydrogen-containing compound gas.

公开(公告)号：US20220064788A1

公开(公告)日：2022-03-03

申请号：US17418344

申请日：2019-12-10

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO ,  Shimon OSADA

IPC: C23C16/44 ,  H01L21/02

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing an oxygen-containing compound gas.

公开(公告)号：US20180208465A1

公开(公告)日：2018-07-26

申请号：US15745825

申请日：2016-07-25

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO

IPC: C01B7/07 ,  B01D3/36

Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including causing an inert gas to be in gas-liquid contact with a hydrochloric acid in which a concentration is 20 mass % to 50 mass %, distilling the hydrochloric acid with which the inert gas is in gas-liquid contact in the gas-liquid contact and separating a hydrogen chloride from the hydrochloric acid to obtain a crude hydrogen chloride, dehydrating the crude hydrogen chloride obtained in the separating, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.

公开(公告)号：US20220064777A1

公开(公告)日：2022-03-03

申请号：US17414376

申请日：2019-12-03

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO ,  Shimon OSADA

IPC: C23C8/08 ,  H01L21/322 ,  B08B9/08 ,  B08B9/027 ,  C23C8/80

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a hydrogen-containing compound gas.

公开(公告)号：US20220059327A1

公开(公告)日：2022-02-24

申请号：US17417912

申请日：2019-12-10

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO ,  Shimon OSADA

IPC: H01J37/32 ,  B08B5/00

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a fluorine-containing compound gas.

公开(公告)号：US20210217627A1

公开(公告)日：2021-07-15

申请号：US16756914

申请日：2018-10-22

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO

IPC: H01L21/311

Abstract: An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3-x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.

公开(公告)号：US20190185323A1

公开(公告)日：2019-06-20

申请号：US16311404

申请日：2017-05-17

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke TANIMOTO ,  Yasuyuki HOSHINO

IPC: C01B17/16 ,  F17C1/14 ,  F17C5/06

CPC classification number: C01B17/16 ,  F17C1/00 ,  F17C1/14 ,  F17C5/06 ,  F17C2203/0643 ,  F17C2221/037

Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.