High-Surface Capacitor Electrode
    1.
    发明授权
    High-Surface Capacitor Electrode 有权
    高表面电容器电极

    公开(公告)号:US09165717B1

    公开(公告)日:2015-10-20

    申请号:US13753637

    申请日:2013-01-30

    Abstract: A high surface area valve-metal capacitor electrode is formed on a moving substrate in vacuum by a continuous multilayer vapor-phase deposition process under conditions of substrate temperature and speed that produce continuously growing, uninterrupted dendritic structures. The process is carried out in an atmosphere of inert gas, preferably including He or Ar, with or without an impurity gas such as oxygen. The substrate may be a valve-metal foil or wire, a metal screen, a polymer film, an organic or inorganic fiber, or a composite material. The direction of motion of the moving substrate may be reversed during the deposition process in order to increase the porosity of the dendrites. The electrode may be passivated using an oxygen-containing plasma before exposure to air. The process may also be carried out under conditions that produce boundary-layer turbulence in order to promote the continuously growth of uninterrupted dendritic structures.

    Abstract translation: 在基板温度和速度的条件下,通过连续的多层气相沉积工艺在真空中在移动的基板上形成高表面积的阀 - 金属电容器电极,从而产生连续生长的,不间断的树枝状结构。 该方法在惰性气体气氛中进行,优选包括He或Ar,有或无杂质气体如氧气。 基材可以是阀 - 金属箔或金属丝,金属网,聚合物膜,有机或无机纤维或复合材料。 移动的衬底的运动方向可以在沉积过程中反转,以增加枝晶的孔隙率。 在暴露于空气之前,可以使用含氧等离子体来钝化电极。 该方法也可以在产生边界层湍流的条件下进行,以促进不间断的树枝状结构的连续生长。

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