公开(公告)号：US20210119157A1

公开(公告)日：2021-04-22

申请号：US17253827

申请日：2019-06-27

Applicant: SMARTKEM LIMITED

Inventor： Ian LOWMAN ,  John MORGAN ,  Soad MOHIALDIN-KHAFFAF ,  Colin WATSON ,  Beverley BROWN

IPC: H01L51/05 ,  H01L51/00 ,  C09D4/00 ,  C08F230/08 ,  C09D143/04

Abstract: The present invention provides an organic gate insulator (OGI) layer having a low dielectric constant (k), said organic gate insulator layer being over-coated with a cross-linked organic layer (OSPL) having a relatively high permittivity (k). The present invention also provides an electronic device comprising such an organic thin film transistor. The invention also provides a solution for producing said OSPL, and a process for producing said OSPL.