公开(公告)号：US20230386896A1

公开(公告)日：2023-11-30

申请号：US18449298

申请日：2023-08-14

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/762

CPC classification number: H01L21/76275 ,  H01L21/76254

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US10957577B2

公开(公告)日：2021-03-23

申请号：US16301276

申请日：2017-05-17

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/00 ,  H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US20190181035A1

公开(公告)日：2019-06-13

申请号：US16301260

申请日：2017-05-17

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/762 ,  H01L27/12

CPC classification number: H01L21/76254 ,  H01L27/1203

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate includes bonding a donor substrate to a receiving substrate, with a dielectric layer at the interface, and transferring a monocrystalline semiconductor layer from the donor substrate to the receiving substrate. A portion is cut from a stack formed from the transferred monocrystalline semiconductor layer from the dielectric layer and from the strained semiconductor material layer. The cutting results in the relaxation of the strain in the strained semiconductor material, and in the application of at least a part of the strain to the transferred monocrystalline semiconductor layer. The method also involves the formation, on the strained semiconductor material layer of the receiving substrate, of a dielectric bonding layer or of a bonding layer consisting of the same relaxed, or at least partially relaxed, monocrystalline material as the monocrystalline semiconductor layer of the donor substrate.

公开(公告)号：US20200321243A1

公开(公告)日：2020-10-08

申请号：US16301276

申请日：2017-05-17

Applicant: SOITEC

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US09799549B2

公开(公告)日：2017-10-24

申请号：US14780467

申请日：2014-03-21

Applicant: Soitec

Inventor： Sebastien Kerdiles ,  Guillaume Chabanne ,  Francois Boedt ,  Aurelia Pierret ,  Xavier Schneider ,  Didier Landru

IPC: H01L21/762 ,  H01L21/02 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/0217 ,  H01L27/12 ,  H01L29/0649

Abstract: The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

公开(公告)号：US20160042989A1

公开(公告)日：2016-02-11

申请号：US14780467

申请日：2014-03-21

Applicant: SOITEC

Inventor： Sebastien Kerdiles ,  Guillaume Chabanne ,  Francois Boedt

IPC: H01L21/762 ,  H01L27/12 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/0217 ,  H01L27/12 ,  H01L29/0649

Abstract: The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

Abstract translation: 本公开涉及一种用于制造复合结构的方法，该方法包括以下步骤：a）提供施主衬底和载体衬底; b）形成电介质层; c）形成覆盖层; d）在供体衬底中形成弱化区; e）通过具有轮廓的接触表面接合载体基底和施主基底; f）通过弱化区域破坏施主衬底，执行步骤b）和e），使得轮廓被刻划在轮廓中，并且步骤c）被执行以使覆盖层覆盖电介质层的周边表面。

公开(公告)号：US12261079B2

公开(公告)日：2025-03-25

申请号：US18449298

申请日：2023-08-14

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/00 ,  H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US11728207B2

公开(公告)日：2023-08-15

申请号：US17207202

申请日：2021-03-19

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/00 ,  H01L21/762

CPC classification number: H01L21/76275 ,  H01L21/76254

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US20210225695A1

公开(公告)日：2021-07-22

申请号：US17207202

申请日：2021-03-19

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US10672646B2

公开(公告)日：2020-06-02

申请号：US16301260

申请日：2017-05-17

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L27/12 ,  H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate includes bonding a donor substrate to a receiving substrate, with a dielectric layer at the interface, and transferring a monocrystalline semiconductor layer from the donor substrate to the receiving substrate. A portion is cut from a stack formed from the transferred monocrystalline semiconductor layer from the dielectric layer and from the strained semiconductor material layer. The cutting results in the relaxation of the strain in the strained semiconductor material, and in the application of at least a part of the strain to the transferred monocrystalline semiconductor layer. The method also involves the formation, on the strained semiconductor material layer of the receiving substrate, of a dielectric bonding layer or of a bonding layer consisting of the same relaxed, or at least partially relaxed, monocrystalline material as the monocrystalline semiconductor layer of the donor substrate.