公开(公告)号：US20170045644A1

公开(公告)日：2017-02-16

申请号：US15305721

申请日：2015-04-27

Applicant: SONY CORPORATION

Inventor： Masamitsu KAGEYAMA ,  Kazuya HAYASHIBE ,  Hiroshi TANAKA

IPC: G02B1/115 ,  H01L27/146 ,  G02B5/00 ,  H04N5/369 ,  G02B1/118

CPC classification number: G02B1/115 ,  G02B1/118 ,  G02B3/0056 ,  G02B5/003 ,  G02B5/201 ,  H01L27/14 ,  H01L27/1462 ,  H04N5/369

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of effectively inhibiting occurrence of reflection and diffraction of light on a light incident surface. A fine uneven structure including a recess and a protrusion is formed with a predetermined pitch on a light incident surface of a semiconductor layer in which photoelectric conversion sections are formed for a plurality of pixels; and an antireflective film is laminated on the fine uneven structure, the antireflective film being formed with a film thickness different for each color of light received by each of the pixels. The pitch of one of the recess and protrusion formed in the fine uneven structure is generally identical in all the pixels, and is 100 nm or less. The present technology is applicable, for example, to a solid-state imaging element.

Abstract translation: 本公开涉及能够有效地抑制光入射面上的光的反射和衍射的固体摄像元件和电子设备。 在形成有多个像素的光电转换部的半导体层的光入射面上，以规定的间距形成包括凹部和突起的微细凹凸结构， 并且在该微细凹凸结构上层叠防反射膜，该防反射膜形成为对于由每个像素接收的每种颜色的不同的膜厚。 在微细凹凸结构中形成的凹凸中的一个的间距在所有像素中大致相同，为100nm以下。 本技术例如可应用于固态成像元件。