公开(公告)号：US10431436B2

公开(公告)日：2019-10-01

申请号：US15690414

申请日：2017-08-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Huma Ashraf ,  Kevin Riddell ,  Roland Mumford ,  Grant Baldwin

IPC: H01J37/32 ,  H01L21/67

Abstract: A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.