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1.
公开(公告)号:US20240347477A1
公开(公告)日:2024-10-17
申请号:US18633538
申请日:2024-04-12
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh KIM , JinHee JUNG
IPC: H01L23/552 , H01L21/56
CPC classification number: H01L23/552 , H01L21/56
Abstract: A method for forming a shielding layer over a semiconductor package is provided. The method comprises: providing a jig having a metal frame and a carrier tape attached onto the metal frame via an adhesive layer; forming an opening through the adhesive layer and the carrier tape; disposing a semiconductor package on the jig over the opening such that the semiconductor package is supported on and attached to the carrier tape via the adhesive layer; forming a groove in the adhesive layer and around the opening by isotropic etching; forming a shielding layer over the semiconductor package and the jig; and removing the semiconductor package with the shielding layer from the jig.
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公开(公告)号:US20240120291A1
公开(公告)日:2024-04-11
申请号:US18482849
申请日:2023-10-07
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh KIM , JinHee JUNG
IPC: H01L23/552 , H01L21/56 , H01L21/66 , H01L23/31 , H01L23/544
CPC classification number: H01L23/552 , H01L21/561 , H01L22/12 , H01L23/3121 , H01L23/3135 , H01L23/544 , H01L2223/54453
Abstract: A semiconductor device and a method for making the same are provided. The method includes: providing a package including: a substrate including a top substrate surface and a bottom substrate surface; an electronic component mounted on the top substrate surface; and a first encapsulant disposed on the top substrate surface and encapsulating the electronic component; forming a fiducial mark in the first encapsulant; and forming a first shielding layer on the first encapsulant using an aerosol jetting apparatus, wherein the first shielding layer is at a predetermined distance from the fiducial mark and above the electronic component.
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公开(公告)号:US20240112981A1
公开(公告)日:2024-04-04
申请号:US18475238
申请日:2023-09-27
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh KIM , SeungHyun LEE , HeeSoo LEE
IPC: H01L23/42 , H01L21/48 , H01L23/00 , H01L23/367 , H01L23/48 , H01L25/00 , H01L25/065
CPC classification number: H01L23/42 , H01L21/4882 , H01L23/367 , H01L23/481 , H01L24/32 , H01L25/0657 , H01L25/50 , H01L2224/32245 , H01L2225/06568
Abstract: A semiconductor device comprises a substrate; a primary semiconductor die attached onto the substrate comprising a front surface and a back surface, wherein the primary semiconductor die has a first region and a second region besides the first region; an auxiliary semiconductor die attached onto the front surface at the first region; a heat transfer block comprising a main body attached onto the front surface at the second region; a metal layer wrapping around the main body; a graphene layer formed outside of the metal layer; a heat spreader attached onto the substrate and defining with the substrate a chamber for accommodating the primary semiconductor die, the auxiliary semiconductor die and the heat transfer block, wherein the graphene layer extends between the heat spreader and the front surface such that heat generated by the first region can be transferred to the heat spreader through the graphene layer.
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公开(公告)号:US20240332151A1
公开(公告)日:2024-10-03
申请号:US18605841
申请日:2024-03-15
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: JinHee JUNG , ChangOh KIM
IPC: H01L23/498 , H01L21/32 , H01L21/48 , H01L23/00 , H01L23/552 , H01L25/065
CPC classification number: H01L23/49822 , H01L21/32 , H01L21/486 , H01L23/49816 , H01L23/552 , H01L24/05 , H01L24/29 , H01L25/0652 , H01L2224/05005 , H01L2224/05025 , H01L2224/29005 , H01L2224/29021 , H01L2924/0665 , H01L2924/15311 , H01L2924/18161 , H01L2924/182 , H01L2924/3025
Abstract: An integrated package and a method for making the same are provided. The integrated package may include: a substate; a first electronic component mounted on the substrate; a first dielectric layer formed on the substrate and covering the first electric component, wherein the dielectric layer is made of photo imageable dielectric material; a first redistribution layer formed in the first dielectric layer, wherein the first redistribution layer includes a first vertical portion running through the first dielectric layer and a first lateral portion formed on a top surface of the first dielectric layer; a second electronic component mounted above the first dielectric layer and coupled with the lateral portion of the first redistribution layer; and a second dielectric layer formed above the first dielectric layer and covering the second electronic component.
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公开(公告)号:US20240250062A1
公开(公告)日:2024-07-25
申请号:US18414500
申请日:2024-01-17
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: JinHee JUNG , ChangOh KIM , HeeSoo LEE
CPC classification number: H01L24/82 , H01L21/561 , H01L24/24 , H01L25/0655 , H01L25/50 , H01L21/568 , H01L23/295 , H01L23/3185 , H01L2224/24137 , H01L2224/245 , H01L2224/82005 , H01L2224/82103 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079
Abstract: A method for making a semiconductor device is provided. The method includes: providing a semiconductor assembly comprising a first semiconductor die and a second semiconductor die, wherein a first interconnection structure is electrically coupled to the first semiconductor die and a second interconnection structure is electrically coupled to the second semiconductor die; depositing an encapsulant layer over the semiconductor assembly to encapsulate the first interconnection structure and the second interconnection structure, wherein the encapsulant layer comprises an additive activatable by laser; forming an interconnection channel in the encapsulant layer and activating the additive of the encapsulant layer in the interconnection channel as a seed layer by laser patterning, wherein the interconnection channel exposes and interconnects the first and the second interconnection structures; forming a conductive layer in the interconnection channel of the encapsulant layer; and forming an outer layer on the encapsulant layer to cover the conductive layer.
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公开(公告)号:US20240387309A1
公开(公告)日:2024-11-21
申请号:US18661773
申请日:2024-05-13
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: JinHee JUNG , ChangOh KIM , WooSoon KIM
IPC: H01L23/31 , H01L21/56 , H01L23/498 , H01L23/552
Abstract: An electronic package is provided. The electronic package includes: a substrate comprising a substrate surface, and a first set of conductive patterns and a second set of conductive patterns on the substrate surface; at least one electronic component attached on the substrate surface and electrically connected to the second set of conductive patterns; an encapsulant layer encapsulating the at least one electronic component and exposing the first set of conductive patterns; and a shielding layer formed over the encapsulant layer and not over the first set of conductive patterns, wherein the shielding layer is formed of a conductive ink cured by ultraviolet light.
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公开(公告)号:US20240339394A1
公开(公告)日:2024-10-10
申请号:US18605842
申请日:2024-03-15
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: JinHee JUNG , ChangOh KIM
IPC: H01L23/498 , H01L21/56 , H01L23/00 , H01L23/552 , H01L25/065 , H01L25/16
CPC classification number: H01L23/49894 , H01L21/56 , H01L23/552 , H01L24/13 , H01L24/16 , H01L25/0655 , H01L25/16 , H01L2224/13016 , H01L2224/16227
Abstract: A partially shielded semiconductor device and a method for making the same are provided. The method may include: providing a package including: a substrate; an electronic component mounted on the substrate; an encapsulant formed on the substrate and encapsulating the electronic component; and a coating layer formed on the substrate and adjacent to the encapsulant; performing a laser hatching process on the encapsulant and a portion of the coating layer adjacent to the encapsulant to remove the portion of the coating layer to form a trench between the encapsulant and the coating layer; and electroless-plating a conductive material to cover the encapsulant and fill the trench between the encapsulant and the coating layer.
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公开(公告)号:US20240234270A1
公开(公告)日:2024-07-11
申请号:US18395626
申请日:2023-12-25
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh KIM , JinHee JUNG , OMin KWON
IPC: H01L23/498 , H01L21/48 , H01L21/56 , H01L23/538 , H01L23/552 , H01L25/16
CPC classification number: H01L23/49811 , H01L21/4853 , H01L21/565 , H01L23/5383 , H01L23/552 , H01L25/165 , H01L24/16 , H01L2224/16225
Abstract: A semiconductor device and a method for making the same are provided. The method includes: providing a substrate having a first surface and a second surface opposite to the first surface, wherein a plurality of conductive pillars are formed on the second surface of the substrate; forming a polyimide layer on the second surface of the substrate to cover the plurality of conductive pillars; mounting a first electronic component on the first surface of the substrate; and forming a first encapsulant on the first surface of the substrate to cover the first electronic component.
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公开(公告)号:US20240055368A1
公开(公告)日:2024-02-15
申请号:US18447315
申请日:2023-08-10
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh KIM , JinHee JUNG , OMin KWON
IPC: H01L23/552 , H01L23/31 , H01L21/56
CPC classification number: H01L23/552 , H01L23/3121 , H01L21/565
Abstract: A semiconductor device and a method for making the same are provided. The semiconductor device includes: a substrate; an electronic component mounted on the substrate; a first encapsulant disposed on the substrate and encapsulating the electronic component; and a first electromagnetic interference (EMI) shielding layer disposed on the first encapsulant, wherein the first EMI shielding layer includes a first plurality of shield protrusions each having one or more inclined sidewalls.
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