公开(公告)号：US20250087499A1

公开(公告)日：2025-03-13

申请号：US18463613

申请日：2023-09-08

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Kirak Son ,  JungHwan Jang ,  KyungHan Ryu ,  MyongSuk Kang ,  JaeSeong Choi ,  YoungJoon Yoon

IPC: H01L21/48 ,  H01L23/498

Abstract: A semiconductor device has a carrier. A first redistribution layer is formed over the carrier. A capping layer is formed on the first redistribution layer. The capping layer includes an anti-reflective coating. An insulating layer is formed on the capping layer. An opening is formed through the insulating layer using photolithography. A conductive layer is formed in the opening.