公开(公告)号：US20160276239A1

公开(公告)日：2016-09-22

申请号：US15169261

申请日：2016-05-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Rui Huang ,  Kang Chen ,  Yu Gu

IPC: H01L23/31 ,  H01L25/065 ,  H01L25/00 ,  H01L23/538 ,  H01L23/00 ,  H01L23/29 ,  H01L23/522 ,  H01L23/498

CPC classification number: H01L23/3128 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/92144 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2224/19 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads of the semiconductor die. A first conductive layer is formed over the first insulating layer and into the first vias to electrically connect to the contact pads of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. Second vias are formed through the second insulating layer by laser direct ablation and aligned or offset with the first vias to expose the first conductive layer. A second conductive layer is formed over the second insulating layer and into the second vias. Conductive vias can be formed through the encapsulant.

公开(公告)号：US10170385B2

公开(公告)日：2019-01-01

申请号：US15169261

申请日：2016-05-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Rui Huang ,  Kang Chen ,  Yu Gu

IPC: H01L23/053 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L23/29 ,  H01L23/522 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads of the semiconductor die. A first conductive layer is formed over the first insulating layer and into the first vias to electrically connect to the contact pads of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. Second vias are formed through the second insulating layer by laser direct ablation and aligned or offset with the first vias to expose the first conductive layer. A second conductive layer is formed over the second insulating layer and into the second vias. Conductive vias can be formed through the encapsulant.