公开(公告)号：US11380486B2

公开(公告)日：2022-07-05

申请号：US16571738

申请日：2019-09-16

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel

IPC: H01L49/02 ,  H01G4/33 ,  H01G4/30 ,  H01G4/224

Abstract: A vertical capacitor includes a stack of layers conformally covering walls of a first material. The walls extend from a substrate made of a second material different from the first material.

公开(公告)号：US10797290B2

公开(公告)日：2020-10-06

申请号：US15440683

申请日：2017-02-23

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel ,  Julien Ladroue

IPC: H01M2/20 ,  H01M6/40

Abstract: Identical planar electronic components are stacked in an assembly. Each component has two contact metallizations positioned on edges of a same surface of the component. The components are stacked along a common axis. Each successive component is rotated about the common axis by a fixed angle. A value of the fixed angle is selected to position, side by side, the contact metallization of one component and the contact metallization of another next component adjacent to each other in the stack. Electrical connections are provided between two adjacent contact metallizations.

公开(公告)号：US10522796B2

公开(公告)日：2019-12-31

申请号：US15699233

申请日：2017-09-08

Applicant: STMicroelectronics (Tours) SAS

Inventor： Julien Ladroue ,  Mohamed Boufnichel

IPC: H01M2/06 ,  H01M2/02 ,  H01M10/058 ,  H01M2/20 ,  H01M2/30 ,  H01M10/04 ,  H01M10/0525

Abstract: A battery structure has structure anode and cathode contacts on a front face and on a rear face. The battery structure includes a battery having battery anode and cathode contacts only on a front face thereof. A film including a conductive layer and an insulating layer jackets the battery. The conductive layer extends over the battery anode and cathode contacts and is interrupted therebetween. Openings are provided in the insulating layer on the front and rear faces of the battery structure to form the structure anode and cathode contacts of the battery structure.

公开(公告)号：US11955480B2

公开(公告)日：2024-04-09

申请号：US17741900

申请日：2022-05-11

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Mohamed Boufnichel

IPC: H01L27/08 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L27/0629 ,  H01L28/87 ,  H01L28/90

Abstract: The present disclosure concerns an integrated circuit comprising a substrate, the substrate comprising a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the circuit comprising a three-dimensional capacitor formed inside and on top of the first region, and at least first and second connection terminals formed on the second region, the first and second connection terminals being respectively connected to first and second electrodes of the three-dimensional capacitor.

公开(公告)号：US20190237717A1

公开(公告)日：2019-08-01

申请号：US16255625

申请日：2019-01-23

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel

IPC: H01M2/10 ,  H01M10/46 ,  H02J7/02

CPC classification number: H01M2/1066 ,  H01M2/0207 ,  H01M2/0275 ,  H01M2/0287 ,  H01M2/1061 ,  H01M2/204 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/425 ,  H01M10/441 ,  H01M10/46 ,  H01M2010/0495 ,  H01M2220/30 ,  H01M2300/0065 ,  H02J7/022

Abstract: The disclosure relates to microbattery devices and assemblies. In an embodiment, a device includes a plurality of microbatteries, a first flexible encapsulation film, and a second flexible encapsulation film. Each of the microbatteries includes a first contact terminal and a second contact terminal spaced apart from one another. The first flexible encapsulation film includes a first conductive layer electrically coupled to the first contact terminal of each of the microbatteries, and a first insulating layer on the first conductive layer. The second flexible encapsulation film includes a second conductive layer electrically coupled to the second contact terminal of each of the microbatteries, and a second insulating layer on the second conductive layer.

公开(公告)号：US11373994B2

公开(公告)日：2022-06-28

申请号：US17028732

申请日：2020-09-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel

IPC: H01L27/02 ,  H01L21/762 ,  H01L29/06

Abstract: Methods and devices for protecting against electrical discharges are provided. One such device for protecting against electrical discharges includes a semiconductor substrate and an isolation trench in the semiconductor substrate. The isolation trench includes an enclosed space that contains a gas.

公开(公告)号：US10903525B2

公开(公告)日：2021-01-26

申请号：US16053223

申请日：2018-08-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Julien Ladroue ,  Mohamed Boufnichel

IPC: H01M10/0585 ,  H01M10/04 ,  H01M4/04 ,  H01M4/40 ,  H01M6/40

Abstract: A self-supporting thin-film battery is manufacture by forming on the upper surface of a support substrate a vertical active stack having as a lower layer a metal layer having formed therein a first contact terminal of a first polarity of the battery and having formed therein as an upper layer a metal layer having a second contact terminal of a second polarity of the battery. A support film is then bonded to an upper surface of the upper layer. The lower layer is the separated from the substrate by projecting a laser beam through the substrate from a lower surface thereof to impinge on the lower layer.

公开(公告)号：US20180026249A1

公开(公告)日：2018-01-25

申请号：US15440683

申请日：2017-02-23

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel ,  Julien Ladroue

IPC: H01M2/20

Abstract: Identical planar electronic components are stacked in an assembly. Each component has two contact metallizations positioned on edges of a same surface of the component. The components are stacked along a common axis. Each successive component is rotated about the common axis by a fixed angle. A value of the fixed angle is selected to position, side by side, the contact metallization of one component and the contact metallization of another next component adjacent to each other in the stack. Electrical connections are provided between two adjacent contact metallizations.

公开(公告)号：US09780366B2

公开(公告)日：2017-10-03

申请号：US14470827

申请日：2014-08-27

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel ,  Jean-Christophe Houdbert

IPC: H01M4/38 ,  H01L31/0236 ,  H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  C09K13/00 ,  H01L21/3065 ,  H01M4/02

CPC classification number: H01M4/386 ,  C09K13/00 ,  H01L21/3065 ,  H01L31/0236 ,  H01L31/02363 ,  H01M4/049 ,  H01M4/134 ,  H01M4/1395 ,  H01M2004/021 ,  H01M2004/027

Abstract: A method for forming a rough silicon wafer including the successive steps of: performing a plasma etching of a surface of the wafer in conditions suitable to obtain a rough structure, and performing two successive ion milling steps, one at an incidence in the range of 0 to 10°, the other at an incidence in the range of 40 to 60° relative to the normal to the wafer.

公开(公告)号：US20170018810A1

公开(公告)日：2017-01-19

申请号：US15049766

申请日：2016-02-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Julien Ladroue ,  Mohamed Boufnichel

IPC: H01M10/0585

CPC classification number: H01M10/0585 ,  H01M4/0404 ,  H01M4/0407 ,  H01M6/40 ,  H01M10/0436 ,  H01M2220/30

Abstract: A self-supporting thin-film battery is manufacture by forming on the upper surface of a support substrate a vertical active stack having as a lower layer a metal layer having formed therein a first contact terminal of a first polarity of the battery and having formed therein as an upper layer a metal layer having a second contact terminal of a second polarity of the battery. A support film is then bonded to an upper surface of the upper layer. The lower layer is the separated from the substrate by projecting a laser beam through the substrate from a lower surface thereof to impinge on the lower layer.

Abstract translation: 通过在支撑基板的上表面上形成垂直有源堆叠来制造自支撑薄膜电池，所述垂直有源堆叠具有作为下层的金属层，所述金属层形成有电池的第一极性的第一接触端子并且在其中形成 作为上层，具有电池的第二极性的第二接触端子的金属层。 然后将支撑膜粘合到上层的上表面。 下层通过从其下表面投射激光束穿过衬底而与衬底分离以撞击下层。