公开(公告)号：US12057513B2

公开(公告)日：2024-08-06

申请号：US18210155

申请日：2023-06-15

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Brice Arrazat ,  Julien Delalleau ,  Joel Metz

IPC: H01L21/00 ,  H01L21/265 ,  H01L21/28 ,  H01L29/423 ,  H01L29/788 ,  H01L29/94 ,  H01L49/02 ,  H10B41/35

CPC classification number: H01L29/945 ,  H01L21/2652 ,  H01L28/91 ,  H01L29/40114 ,  H01L29/4236 ,  H01L29/788 ,  H10B41/35

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

公开(公告)号：US11721773B2

公开(公告)日：2023-08-08

申请号：US17366585

申请日：2021-07-02

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Brice Arrazat ,  Julien Delalleau ,  Joel Metz

IPC: H01L21/00 ,  H01L29/94 ,  H01L21/28 ,  H01L21/265 ,  H01L49/02 ,  H01L29/423 ,  H01L29/788 ,  H10B41/35

CPC classification number: H01L29/945 ,  H01L21/2652 ,  H01L28/91 ,  H01L29/40114 ,  H01L29/4236 ,  H01L29/788 ,  H10B41/35

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.