公开(公告)号：US20250133843A1

公开(公告)日：2025-04-24

申请号：US18917639

申请日：2024-10-16

Applicant: STMicroelectronics International N.V.

Inventor： Isobel NICHOLSON ,  Dominique GOLANSKI ,  Bastien MAMDY

IPC: H01L27/146

Abstract: An avalanche photodiode includes first semiconductor region of a first conductivity type in a semiconductor substrate and a second semiconductor region of a second conductivity type in the semiconductor substrate which forming a PN junction to be reverse-biased. A third semiconductor region of the second conductivity type in the semiconductor substrate is positioned such that the second region is closer to the first region than the third region. A fourth semiconductor region of the second conductivity type in a semiconductor substrate is in contact with the second and third regions. A dopant concentration of the fourth region is less than dopant concentrations of the second and third regions. The fourth region is arranged to at least partially surround the second region, and the third region is arranged to at least partially surround the fourth region.

公开(公告)号：US20240204127A1

公开(公告)日：2024-06-20

申请号：US18540625

申请日：2023-12-14

Applicant: STMicroelectronics International N.V.

Inventor： Antonin ZIMMER ,  Dominique GOLANSKI ,  Sebastien PLACE ,  Guillaume MARCHAND

IPC: H01L31/107 ,  H01L21/763 ,  H01L31/0288 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L21/763 ,  H01L31/0288 ,  H01L31/1804

Abstract: The present description concerns an avalanche photodiode comprising: a main PN junction adapted to being reverse-biased; and a plurality of semiconductor regions including at least: a first epitaxial semiconductor region of a first conductivity type; and a second semiconductor region of the second conductivity type, said second region being arranged to at least partially surround the first region, and comprising surfaces in contact with surfaces of said first region. The present description also concerns a method of manufacturing such a photodiode.