公开(公告)号：US20240258377A1

公开(公告)日：2024-08-01

申请号：US18408474

申请日：2024-01-09

Applicant: STMicroelectronics International N.V.

Inventor： Mario Giuseppe SAGGIO ,  Cateno Marco CAMALLERI ,  Laura Letizia SCALIA ,  Alfio GUARNERA

IPC: H01L29/10 ,  H01L21/04 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1087 ,  H01L21/0465 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

Abstract: A MOSFET device of a vertical conduction type has a substrate of silicon carbide having a first conductivity type and a main face. A body region of a second conductivity type extends into the substrate from the main face and has a first depth along a first direction. A first and a second source region of the first conductivity type extend inside the body region starting from the main face parallel to each other and have a second depth along the first direction smaller than the first depth and are mutually spaced by a distance in a second direction perpendicular to the first direction. A body contact region of the second conductivity type extends inside the body region between the first and the second source regions and has a third depth along the first direction greater than or equal to the second depth.

公开(公告)号：US20240297043A1

公开(公告)日：2024-09-05

申请号：US18583758

申请日：2024-02-21

Applicant: STMicroelectronics International N.V.

Inventor： Alfio GUARNERA ,  Cateno Marco CAMALLERI ,  Edoardo ZANETTI ,  Laura Letizia SCALIA ,  Mario Pietro BERTOLINI ,  Massimiliano CANTIANO ,  Massimo BOSCAGLIA ,  Mario Giuseppe SAGGIO

IPC: H01L21/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/046 ,  H01L29/0619 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/7802

Abstract: A process for manufacturing a power electronic device, envisages: forming a semiconductor body of silicon carbide, having a first electrical conductivity and a first doping value, and defining a front surface; forming a Current Spreading Layer, CSL, in a surface portion of said semiconductor body facing the front surface, having the first electrical conductivity and a second doping value, greater than the first doping value; forming elementary cells of the power electronic device in an active area of the semiconductor body at the front surface. The step of forming the current spreading layer envisages performing a channeled ion implantation, in a channeling condition, for implanting doping ions having the first electrical conductivity within the semiconductor body.