公开(公告)号：US20250120106A1

公开(公告)日：2025-04-10

申请号：US18905487

申请日：2024-10-03

Applicant: STMicroelectronics International N.V.

Inventor： Arnaud RIVAL ,  Alexis GAUTHIER ,  Edoardo BREZZA ,  Pascal CHEVALIER

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

Abstract: A method of making a bipolar transistor includes: forming a first collector part of a first conductivity type in a semiconductor layer; forming a first insulating region made of a first insulating material on the first collector part; forming a conduction layer intended to form a first doped base part of the second conductivity type on the first insulating region; forming an opening having a first width in the conduction layer that emerges onto the first insulating region; forming an insulating layer on the conduction layer and in the opening; forming a cavity in the insulating layer and in the first insulating region that emerges onto a portion of the first collector part through the opening, the cavity having at the level of the opening a second width smaller than the first width; and forming a second collector part in the cavity on the portion of the first collector part.

公开(公告)号：US20240404940A1

公开(公告)日：2024-12-05

申请号：US18678025

申请日：2024-05-30

Applicant: STMicroelectronics International N.V.

Inventor： Pascal CHEVALIER

IPC: H01L23/498 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/735

Abstract: A device includes a bipolar transistor. The bipolar transistor includes: a collector region, a base region, and an emitter region. A first metallization is in contact with the emitter region, a second metallization is in contact with the base region, and a third metallization is in contact with the collector region. A first connection element is coupled to the first metallization and has dimensions, in a plane of the interface between the first metallization and the connection element, greater than dimensions of the first metallization. A second connection element is coupled to the second metallization and passes through spacers, which at least partially cover the second metallization, surrounding the emitter region. A third connection element is coupled to the third metallization and passes through spacers, which at least partially cover the third metallization, surrounding the base region.

公开(公告)号：US20240355913A1

公开(公告)日：2024-10-24

申请号：US18637047

申请日：2024-04-16

Applicant: STMicroelectronics International N.V.

Inventor： Pascal CHEVALIER ,  Nicolas GUITARD

IPC: H01L29/732 ,  H01L27/06 ,  H01L29/66

CPC classification number: H01L29/732 ,  H01L27/0623 ,  H01L29/66272

Abstract: An electronic device includes a bipolar transistor. A collector of the bipolar transistor is formed by first and second regions. The second region is located between the first region and a base of the bipolar transistor. A conductive element at least partially surrounds and is insulated from the second region. The conductive element is located between the first region and the base.

公开(公告)号：US20240332406A1

公开(公告)日：2024-10-03

申请号：US18610829

申请日：2024-03-20

Applicant: STMicroelectronics International N.V.

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Olivier WEBER ,  Franck ARNAUD

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7394 ,  H01L29/66325

Abstract: A bipolar transistor includes a first PN junction and a second PN junction. A first gate is located on the first PN junction. A second gate is located on the second PN junction.