公开(公告)号：US20150083894A1

公开(公告)日：2015-03-26

申请号：US14557158

申请日：2014-12-01

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS ,  STMicroelectronics SA

Inventor： David Coulon ,  Benoit Deschamps ,  Frederic Barbier

IPC: H04N5/345 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/345 ,  H01L27/14605 ,  H01L27/14647 ,  H01L27/14689 ,  H04N5/378

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

Abstract translation: 成像装置包括在半导体衬底中形成的至少一个光电子，并装配有用于过滤至少一个不需要的辐射的过滤装置。 过滤装置以取决于不需要的辐射的波长的深度埋在半导体衬底中。

公开(公告)号：US08988570B2

公开(公告)日：2015-03-24

申请号：US13711037

申请日：2012-12-11

Applicant: STMicroelectronics SA

Inventor： Frederic Barbier

IPC: H04N5/3745 ,  H04N5/335 ,  H04N3/14 ,  H04N5/353 ,  H04N5/355 ,  H01L27/146

CPC classification number: H04N5/335 ,  H01L27/14641 ,  H04N3/155 ,  H04N5/347 ,  H04N5/3532 ,  H04N5/3559 ,  H04N5/374 ,  H04N5/37452

Abstract: A method may include a cycle of reading a current pixel including connecting the capacitive node of the pixel to a capacitive node of a previous pixel already read, connecting the capacitive node of the current pixel and the capacitive node of a previous pixel to an output line, reading a first voltage of the capacitive node of the pixel through the output line, transferring charges from the accumulation node to the capacitive node of the pixel, reading a second voltage of the capacitive node of the pixel through the output line, and disconnecting the capacitive node from the capacitive node of a previous pixel, and a cycle of reading a next pixel. This cycle may include accumulating charges in the accumulation node of the next pixel while the capacitive node of the current pixel is connected to a capacitive node of a previous pixel.

Abstract translation: 方法可以包括读取当前像素的循环，包括将像素的电容性节点连接到已经读取的先前像素的电容性节点，将当前像素的电容性节点和先前像素的电容性节点连接到输出线 通过输出线读取像素的电容性节点的第一电压，将电荷从累积节点传送到像素的电容性节点，通过输出线读取像素的电容性节点的第二电压，并且断开 来自先前像素的电容性节点的电容性节点以及读取下一个像素的周期。 该周期可以包括在下一个像素的累积节点中积累电荷，而当前像素的电容节点连接到先前像素的电容节点。

公开(公告)号：US09998689B2

公开(公告)日：2018-06-12

申请号：US14557158

申请日：2014-12-01

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS ,  STMicroelectronics SA

Inventor： David Coulon ,  Benoit Deschamps ,  Frederic Barbier

IPC: H01L21/00 ,  H04N5/345 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/345 ,  H01L27/14605 ,  H01L27/14647 ,  H01L27/14689 ,  H04N5/378

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.