公开(公告)号：US20250118571A1

公开(公告)日：2025-04-10

申请号：US18757975

申请日：2024-06-28

Applicant: Samsung Display Co., LTD.

Inventor： Changho YI ,  Sanggab KIM ,  Taesung KIM

IPC: H01L21/3213 ,  H01J37/32

Abstract: A plasma etching method reduces redeposition of by-products generated in a process of etching a copper layer. The plasma etching method includes performing a substrate arrangement operation including arranging a substrate including a conductive layer including copper on a mounting portion in a chamber of a plasma etching apparatus, performing a first preliminary etching operation including supplying a first etching gas including a chlorine element into the chamber and applying a first bias voltage to a lower electrode arranged below the substrate, and performing a first etching operation including supplying a second etching gas including a hydrogen element into the chamber and applying a second bias voltage to the lower electrode, wherein the first bias voltage is less than the second bias voltage.