DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250133935A1

    公开(公告)日:2025-04-24

    申请号:US18676874

    申请日:2024-05-29

    Abstract: A display device that includes a light emitting element layer disposed on a substrate, the light emitting element layer including a plurality of light emitting elements; and an encapsulation layer comprising a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on the organic encapsulation layer, the second inorganic encapsulation layer including a first inorganic layer; a second inorganic layer; and a third inorganic layer disposed on the organic encapsulation layer, a thickness of the second inorganic layer is greater than a thickness of the third inorganic layer, the thickness of the third inorganic layer is greater than a thickness of the first inorganic layer, and a refractive index of the second inorganic layer is about 1.9 or more.

    DISPLAY DEVICE AND METHOD OF FABRICATION FOR THE SAME

    公开(公告)号:US20250160174A1

    公开(公告)日:2025-05-15

    申请号:US18742008

    申请日:2024-06-13

    Abstract: A display device that includes a light emitting element layer disposed on a substrate and including a plurality of light emitting elements and an encapsulation layer including an organic-inorganic hybrid layer disposed on the light emitting element layer, a first inorganic encapsulation layer disposed on the organic-inorganic hybrid layer, a second inorganic encapsulation layer disposed on the first inorganic encapsulation layer, and a third inorganic encapsulation layer disposed on the second inorganic encapsulation layer. The organic-inorganic hybrid layer contains silicon, carbon and nitrogen. The first inorganic encapsulation layer, the second inorganic encapsulation layer and the third inorganic encapsulation layer each contains silicon and nitrogen. An atomic ratio of nitrogen to silicon (N/Si ratio) in the organic-inorganic hybrid layer is greater than an atomic ratio of nitrogen to silicon (N/Si ratio) in the first inorganic encapsulation layer and an atomic ratio of nitrogen to silicon (N/Si ratio) in the third inorganic encapsulation layer.

    DISPLAY DEVICE AND METHOD OF FABRICATION FOR THE SAME

    公开(公告)号:US20250169332A1

    公开(公告)日:2025-05-22

    申请号:US18747092

    申请日:2024-06-18

    Abstract: A display device includes a light emitting element layer disposed on a substrate, and an encapsulation layer including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on the light emitting element layer. At least one of the first and the second inorganic encapsulation layer includes a first inorganic layer and a second inorganic layer disposed on the first inorganic layer, the second inorganic layer includes a first surface facing the first inorganic layer, and a second surface opposite to the first surface, a first film density in a region adjacent to the first surface of the second inorganic layer is greater than a second film density in a region adjacent to the second surface of the second inorganic layer, and a film density of the first inorganic layer is greater than the second film density of the second inorganic layer.

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