公开(公告)号：US11335561B2

公开(公告)日：2022-05-17

申请号：US16907029

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hiroshi Okumura ,  Jong Jun Baek ,  Byung Soo So

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/02 ,  B23K26/06

Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

公开(公告)号：US11895880B2

公开(公告)日：2024-02-06

申请号：US17307906

申请日：2021-05-04

Applicant: Samsung Display Co., Ltd.

Inventor： Bo Geon Jeon ,  Min Suk Ko ,  Jong Jun Baek

IPC: H01L21/00 ,  H10K59/131 ,  H10K59/121 ,  H10K59/12

CPC classification number: H10K59/131 ,  H10K59/121 ,  H10K59/1201

Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

公开(公告)号：US12268068B2

公开(公告)日：2025-04-01

申请号：US18430632

申请日：2024-02-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bo Geon Jeon ,  Min Suk Ko ,  Jong Jun Baek

IPC: H10K59/131 ,  H10K59/121 ,  H10K59/12

Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

公开(公告)号：US11804389B2

公开(公告)日：2023-10-31

申请号：US16535021

申请日：2019-08-07

Applicant: Samsung Display Co., Ltd.

Inventor： Byung Soo So ,  In Cheol Ko ,  Jong Jun Baek ,  Jae Woo Jeong

IPC: H01L21/67 ,  H05B6/80 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/67115 ,  H05B6/80 ,  H01L27/124 ,  H01L27/1222 ,  H01L29/78672

Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

公开(公告)号：US11715739B2

公开(公告)日：2023-08-01

申请号：US17338738

申请日：2021-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Oh Seo ,  Jong Jun Baek

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L21/3215 ,  H01L21/02 ,  H10K59/124 ,  H10K71/00 ,  H10K59/123 ,  H10K59/12

CPC classification number: H01L27/1222 ,  H01L21/02068 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02675 ,  H01L21/32155 ,  H01L27/1274 ,  H01L29/78696 ,  H10K59/124 ,  H10K71/00 ,  H10K59/1201 ,  H10K59/123

Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.